Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Abstract

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 10 13 cm −2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm 2 /V•s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

“…The pulsed growth method can effectively reduce the defects induced by the parasitic clathrate generated in the prereaction, and it is also beneficial to increase the adatom migration and thus improve the growth homogeneity. [20][21][22][23][24][25] , which correspond to the GaN buffer, InAlGaN barrier, and AlN nucleation layers, respectively. No additional diffraction peak can be observed, suggesting the good crystal quality of the quaternary InAlGaN materials without phase separation.…”

“…Recently, we proposed a pulsed metal organic chemical vapor deposition (MOCVD) growth technique for the epitaxy of InAlN and InGaN based heterostructures which possess excellent structural and transport properties. [20][21][22][23][24][25] Moreover, the thickness and alloy component of the epitaxial film can be accurately controlled in the pulsed MOCVD process. These results suggest that pulsed MOCVD could be a promising method to address the issues in the growth of high quality InAlGaN based heterostructures.…”

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

“…InGaN compound has been widely used as the channel material due to their lower band gap, which can enhance the high frequency characteristics and to prevent current collapse (Lenka et al, 2013;Zhang et al, 2016;Zhang et al, 2015). In this part, the structure design is improved, where the GaN channel is replaced to InGaN compound.…”