Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter

Chimento, F.; Musumeci, S.; Raciti, A.; Melito, M.; Sorrentino, Giuseppe

doi:10.1109/iecon.2006.347307

Cited by 18 publications

(5 citation statements)

References 3 publications

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“…To the best of our knowledge, this is the highest efficiency reported for E-mode GaN DHFETs on Si substrates at these high switching frequencies. It clearly shows the high potential of GaN-on-Si devices for high-frequency power switching applications compared with commercial Sibased MOSFET devices [15], [16].…”

Section: Converter Resultsmentioning

confidence: 91%

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Das

Everts

Keybus

et al. 2011

IEEE Electron Device Lett.

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III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: R ON * Q G of 2.5 Ω • nC is obtained at V DS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.

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Section: Converter Resultsmentioning

confidence: 91%

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Das

Everts

Keybus

et al. 2011

IEEE Electron Device Lett.

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“…1 with the voltage V DS as a parameter, and the electrical field distribution depends on the applied forward voltage in blocking state: Moreover, specific control steps of the fabrication process have been implemented in order to minimize the doping imbalance between the p-columns and the n conductive layer in the whole 6-inches silicon wafer. Any doping imbalance [5] would produce a strong reduction in the device forward blocking-voltage and will affect the characteristics of the final product. At the first stage of their production, SJ devices led to a three times reduction of the on-state resistance compared to a standard power MOSFET having the same silicon area, together with a consequent reduction of the gate charge, and, hence, reduction of the power losses during both on-state and switching transients.…”

Section: Device Structurementioning

confidence: 99%

“…The PFC circuit is based on a boost topology [4], [5]. The impact of the electrical parameter spread on the current sharing of the devices has been experimentally analyzed.…”

Section: Introductionmentioning

confidence: 99%

Parallel connection of super-junction MOSFETs in a PFC application

Chimento

Raciti

Cannone

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

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The paper deals with an experimental analysis on the behavior of parallel connections of super-junction power MOSFET devices in a boost converter used as power factor corrector (PFC). The main impact of the parameter variation on the parallel connection has been treated. The experimental evaluation of the current sharing in parallel connection has been carried out in several operative conditions by considering the influence of different parameters. Finally, a specific arrangement able to reduce the current imbalance of the devices has been experimented and discussed.

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“…For diode dynamic test, the load inductance Lload position was switched to the lower pair of IGBTs. In this case (for extracting diode losses), the top pair of IGBTs behave as a DUT and bottom pair of IGBT modules goes in the passive mode (i.e., at VGE of -5.0 V and under turn off condition) [8]- [10]. The copper busbar connections from the DC-link capacitor to the DUT in the entire circuit give an approximate stray inductance of 100 nH.…”

Section: Semiconductor Data and Test Setupmentioning

confidence: 99%

Dynamic characterization of parallel-connected high-power IGBT modules

Chen

Chimento

Nawaz

et al. 2013

2013 IEEE Energy Conversion Congress and Exposition

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In high power converter design, IGBT modules are often operated in parallel to reach high output currents. Evaluating the electrical and thermal behaviour of the paralleling IGBTs is crucial for the design and reliable operation of converter systems. This paper investigates the static and dynamic characterization of paralleling IGBTs and the influence of the electrical parameters on the IGBT behaviour. Si based IGBT power modules with voltage rating of 4.5kV and current rating of 1 kA are used for the experimental evaluation of module parallel connections. Parallel connected modules have been driven by several commercial IGBT gate units at various DC-link voltages and current levels and with different temperatures. The tested IGBT gate units show good current sharing performance between the two parallel modules. Other important influencing factors such as busbar design layout, stray inductance variation and gate driving are also investigated for parallel connections of IGBT modules. Finally, the switching energy of the paralleling modules is extracted for IGBTs and diodes under different conditions.

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Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter

Cited by 18 publications

References 3 publications

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Parallel connection of super-junction MOSFETs in a PFC application

Dynamic characterization of parallel-connected high-power IGBT modules

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