Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Abstract

AlGaInN‐based blue–violet laser diodes with a single broad‐area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 μm, and the maximum light output power of 0.94 W under cw operation at 20 °C was achieved for the sample with a stripe width of 10 μm. A super high‐power laser diode array was fabricated using 11 of these high‐performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 °C. This result represents the highest reported output power for blue–violet laser diodes. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

“…GaN-based semiconductors have already been used practically for short wavelength-emitting devices such as the laser diode (LD) and light emitting diode (LED) [1][2][3][4]. In order to realize a highly integrated optical disk and to replace the fluorescent lamps with LED, the emitting efficiency of GaN-based devices should be further increased.…”

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE

“…To reduce the dislocation due to hetero-epitaxy is necessary to realize high performance of the device [1][2][3]. The use of a thick GaN bulk crystal as the substrate has been reported to achieve more improvement in this respect [4]. This is because the homo-epitaxy is desirable to reduce the dislocation density in the active layers.…”

Microstructure of III‐N semiconductors related to their applications in optoelectronics

“…In this method, the pyramidal pits etched every 500 microns in lateral directions in GaN layer on GaAs serve as dislocation sinks. This matarial has density of dislocation of 10 6 cm -2 and is used as substrates for constructing the high-power blue/violet/UV laser diodes by Sony [6]. However, up to now, no comprehensive study on the microstructure of these Sumitomo substrates has been published.…”

“…The importance of low-dislocation density material is proved by the record powers of 1 W c.w. operation of 405 nm LD produced by Sony [6] and almost 4 W during 30 ns pulses from the device produced in our laboratory [14].…”

“…Within the next eight years, the properties of LDs were improved significantly (efficiency, power, reliability, wavelength range). The most spectacular result was presented by Sony in mid 2003: 1 W cw power of 405 nm LD [6]. The LDs demand much lower defect density than the blue LEDs.…”