Summary of the Third Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne, G.; Schubert, Gunnar; Hoornstra, Jaap; Horzel, J.; Glunz, Stefan W.

doi:10.1016/j.egypro.2012.05.002

Cited by 28 publications

(20 citation statements)

References 12 publications

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“…As the growth of the conductive layer is isotropic [see (5) and (6)], the finger spacing should be optimized together with the plating thickness [12] and the doping profile. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Typically, the height of printed lines is in the range of 10-20 μm with a width of 60-100 μm [3]. Although the screen printing process is still considered as the main technology for the coming years [4], [5], more advanced solutions used in the laboratory have become available on an industrial scale [6]- [9] to improve efficiency at lower cost [10], [11].…”

Section: Introductionmentioning

confidence: 99%

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Simulations Based on the Cooptimization Procedure for Plated Contacts With a NiSi Interface

Thibert¹,

Jourdan

Bechevet³

et al. 2015

IEEE J. Photovoltaics

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A cooptimization procedure has been developed for industrial solar cells metalized using a nickel seed layer thickened by a plated silver layer. A theoretical contact resistivity model for NiSi nickel silicide contacts was first computed and inserted into classical power loss equations. Optical, resistive, and recombination losses were then simulated with a standard set of parameters used in production. This procedure allows the generation of efficiency and silver consumption contour plots for homogeneous and selective emitters. For both, general guidelines are given for the optimization of the doping profile, the finger spacing, and the finger thickness.

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“…As the growth of the conductive layer is isotropic [see (5) and (6)], the finger spacing should be optimized together with the plating thickness [12] and the doping profile. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulations Based on the Cooptimization Procedure for Plated Contacts With a NiSi Interface

Thibert¹,

Jourdan

Bechevet³

et al. 2015

IEEE J. Photovoltaics

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“…Although many alternative solutions are now available at a laboratory scale, the screen printing process that enables a simple, robust, and fast front side metallization is still seen as the dominant process for next years [1]. Numerous works have dealt with the study of this process, especially as regards to the impact of pastes [2]- [3] and screen properties [4]- [6] on the printing results.…”

Section: Introductionmentioning

confidence: 99%

Combining design of experiments and power loss computations to study the screen printing process

Thibert

Jourdan²,

Bechevet³

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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The screen printing process applied to the front side metallization of silicon solar cell was studied with a full factorial 3 2 4 1 6 1 design of experiments on an industrial line. Four commercially silver pastes from different suppliers, six apertures, and nine stainless screens were used to analyze the printing results of two hundred and sixteen combinations. The fingers geometrical properties, the line resistivity, and the contact resistivity were inputted in a power loss simulation program to compute the optimal fingers spacing and the theoretical efficiency for each combination. The relative contribution and the effect of all factors and interactions on the solar cell efficiency were calculated to find out general guidelines for process optimization. Finally, a confirmation test was performed on mixed batches of 15.6 x 15.6 cm², 200 µm thick Cz-Si solar cells to validate assumptions. With an optimized process a maximal 19.2 % efficiency was reached.Index Terms -design of experiments, photovoltaic, power loss, screen printing, silicon solar cell, silver paste.

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“…Despite significant advancements in screen-printing to improve cell efficiency at lower manufacturing costs [3,4], several drawbacks still exist that limit cell performance, including compromises between emitter formation and contact resistance and the use of expensive silver pastes, contributing 20% to total cell production costs [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

Analysis of copper penetration in selective-emitter silicon solar cells using laser ablation inductively-coupled plasma mass spectrometry

Colwell

Lennon

2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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This paper reports on an investigation into the use of laser ablation inductively-coupled plasma mass spectrometry (LA-ICPMS) in analyzing copper diffusion through nickel barrier layers in selective-emitter silicon solar cells. Cells plated with nickel and copper were heat-treated at 200 °C for up to 15 hours. Following quenching in ethylene glycol, significant degradation was observed in the plated cells, whereas no degradation was observed in the slow cooled cells. Impurity analysis with high spatial resolution was obtained with LA-ICPMS, showing higher copper content in copper-plated cells after heat treatment compared to cells without copper plating or heat treatment. The limitations of LA-ICPMS for quantitative analysis and the importance of minimizing surface contamination to improve technique sensitivity are also highlighted.

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Summary of the Third Workshop on Metallization for Crystalline Silicon Solar Cells

Cited by 28 publications

References 12 publications

Simulations Based on the Cooptimization Procedure for Plated Contacts With a NiSi Interface

Simulations Based on the Cooptimization Procedure for Plated Contacts With a NiSi Interface

Combining design of experiments and power loss computations to study the screen printing process

Analysis of copper penetration in selective-emitter silicon solar cells using laser ablation inductively-coupled plasma mass spectrometry

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