2002
DOI: 10.1145/774572.774593
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Subthreshold leakage modeling and reduction techniques

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Cited by 181 publications
(109 citation statements)
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“…Therefore, a leakage current will be generated from Drain to Source although the transistor is in the off state. This is called subthreshold leakage where the gate-source voltage is less than the threshold voltage [4]. The current depends exponentially on the gate-source voltage [9].…”
Section: A Principle Of Leakage In the Pixel Structurementioning
confidence: 99%
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“…Therefore, a leakage current will be generated from Drain to Source although the transistor is in the off state. This is called subthreshold leakage where the gate-source voltage is less than the threshold voltage [4]. The current depends exponentially on the gate-source voltage [9].…”
Section: A Principle Of Leakage In the Pixel Structurementioning
confidence: 99%
“…Since the leakage model has been developed in the last section, this can be solved by the leakage percentage as proposed in (4). Therefore, the improved TPFFC including a new training set selection method based on leakage percentage is as follow: 1) Generate uniform light for training: The basic purpose of training images is to provide an example of the imager response while all the pixels are receiving the same amount of energy.…”
Section: Improved Two Points Ffc Algorithmmentioning
confidence: 99%
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“…This technique is also referred to as dual-V th partitioning [24]. Those logic gates that are not part of the critical path are replaced with high-V th transistors to reduce the leakage current by exploiting the excessive slack.…”
Section: Previous Workmentioning
confidence: 99%
“…It is known that leakage power may make up 42% of total power at the 90nm technology node [2]. Thus various techniques are proposed to reduce the leakage power from system level down to physical level.…”
Section: Introductionmentioning
confidence: 99%