Subthreshold conduction in short-channel polycrystalline-silicon thin-film transistors

Chopra, Sonia; Gupta, R. S.

doi:10.1088/0268-1242/15/2/320

Cited by 9 publications

(3 citation statements)

References 18 publications

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“…Other parameters involved are the Fermi level and the mobility variation, described in detail in Ref. 17. In bulk devices, a linear increase of swing vs temperature is expected due to the diffusion nature of the current.…”

Section: Resultsmentioning

confidence: 99%

Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs

Michalas

Papaioannou

Kouvatsos

et al. 2008

J. Electrochem. Soc.

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The role of polycrystalline material properties on the electrical behavior of thin-film transistors (TFTs) is investigated through the temperature analysis of the transfer characteristics in the linear operation regime. The investigation is performed on devices fabricated on films that consist of long grains separated by parallel boundaries, crystallized using the sequential lateral solidification process. The study employed devices with channels aligned parallel and vertical to the boundaries’ direction and on different film thickness. The temperature dependence of typical device parameters, such as the threshold voltage, the subthreshold swing, the mobility, and the leakage current, denotes the grain boundaries’ influence on the electrical behavior. Their presence was found to determine the device performance through thermal activation. The results provide a more quantitative relation between the electrical properties of TFTs and the polycrystalline material properties.

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Section: Resultsmentioning

confidence: 99%

Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs

Michalas

Papaioannou

Kouvatsos

et al. 2008

J. Electrochem. Soc.

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“…A recent study of submicrometre poly-Si TFTs [8,9] shows that the small-geometry devices show many favourable characteristics, i.e. higher mobility, steeper sub-threshold slope, lower threshold voltage and lower leakage current.…”

Section: Introductionmentioning

confidence: 99%

An analytical model for current-voltage characteristics of a small-geometry poly-Si thin-film transistor

Chopra¹,

Gupta²

2000

Semicond. Sci. Technol.

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An analytical model of the above-threshold characteristics of a small-geometry poly-silicon thin film transistor considering the grain boundary effect on the turn-on behaviour is proposed. Small geometry effects are also incorporated to develop an accurate expression for the threshold voltage and the current-voltage (I -V ) characteristics in the turn-on region. Further, the channel length dependent threshold voltage proposed shows good agreement with experimental data and the I -V characteristics with channel dimensions 2 and 0.5 µm are in excellent agreement with experimental results confirming the validity of this model.

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“…Παρά το ότι αυτό το µοντέλο και κάποιες από τις παραλλαγές του (π. [191,192], όµως, πλέον είναι αρκετά καλά κατανοητό ότι το παγιδευµένο φορτίο επηρεάζει κατ' αρχήν τα ηλεκτρικά χαρακτηριστικά των διατάξεων στην υποκατώφλια περιοχή [193] (subthreshold regime).…”

Section: εικόνα23unclassified

Ανάπτυξη Τεχνολογίας Κατασκευής Τρανζίστορς Λεπτών Υμενίων Βελτιστοποιημένων Ως Προς Τη Δομή Των Υμενίων Πυριτίου Που Προκύπτει Από Την Κρυσταλλοποίηση

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Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are essential for large area electronics and high performance flat panel displays. In recent years, LTPS TFT performance has substantially increased due to the important breakthroughs in the field of polycrystalline silicon crystallization and also due to the optimization of the process steps that differ from those of typical MOSFETs, mainly because of the requirement for low temperature procedures. The object of the present dissertation was the electrical characterization of polycrystalline Silicon thin film transistors (poly-Si TFTs), crystallized with different variations of the advanced technique SLS ELA, and the determination of process technological parameters that affect the device performance, in order to further optimize the production of such high performance transistors. We began studying the effect of the TFT active region film microstructure, relating the film characteristics themselves with the electrical performance of the TFTs. Then, we examined the relationship between critical process steps-namely gate dielectric deposition, doping and activation and the channel dimensions to be selected-and TFT electrical characteristics. We also studied the role of the topology (top gate, bottom gate, double gate) on TFT performance. Finally, attempting to further optimize the fabrication process of LTPS TFTs, we tried to modify the typical procedure, studying the use of alternative gate dielectrics.

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Subthreshold conduction in short-channel polycrystalline-silicon thin-film transistors

Cited by 9 publications

References 18 publications

Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs

Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs

An analytical model for current-voltage characteristics of a small-geometry poly-Si thin-film transistor

Ανάπτυξη Τεχνολογίας Κατασκευής Τρανζίστορς Λεπτών Υμενίων Βελτιστοποιημένων Ως Προς Τη Δομή Των Υμενίων Πυριτίου Που Προκύπτει Από Την Κρυσταλλοποίηση

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