Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

Abstract

The incorporation of carbon in Si1−yCy alloys grown using silane and methylsilane by low-pressure rapid thermal chemical vapor deposition is investigated. Substitutional carbon content determined by x-ray diffraction analysis is compared to total carbon concentration measured by secondary ion mass spectrometry. Lower growth temperatures (<600 °C) and higher silane partial pressures are observed to significantly improve substitutional carbon incorporation. At 550 °C, to within experimental error, fully substitutional carbon incorporation is observed over the range of compositions studied (0–1.8 at. % carbon). Fourier transform infrared spectroscopy is also used to verify the presence of substitutional carbon.

Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors

“…Such a value for the substitutional C concentration is to the best of our knowledge the highest ever published for Si 1Ày C y layers thicker than a few nm [29]. The second highest is the one of Mitchell et al [30], i.e. 1.8%.…”

Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

“…Methods to grow Si 1 À x C x alloys using molecular beam epitaxy (MBE)-based techniques [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23], chemical vapor deposition (CVD) [11,[24][25][26][27][28][29][30], and solid phase epitaxy (SPE) [27,31,32] have been extensively studied. However, most of the previous studies were focused on pseudomorphic growths on Si substrate, and there have been only a limited number of investigations on the strain relaxation process during the heteroepitaxial growths of Si 1 À x C x crystalline films [15,22,23].…”

Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon

“…The kinetics of C incorporation during growth of Si 1Ϫy C y alloys on Si͑100͒ has been studied extensively. [4][5][6][7][8] The C substitutional fraction in Si 1Ϫy C y is strongly influenced by the growth conditions, such as temperature and growth rate using molecular beam epitaxy ͑MBE͒. 4-6 Similar trends were also observed for rapid thermal chemical vapor deposition ͑RTCVD͒.…”