Subpicosecond pulse generation at 134 GHz and low radiofrequency spectral linewidth in quantum dash-based Fabry-Perot lasers emitting at 1.5 [micro sign]m

Gosset, C.; Merghem, K.; Martinez, A.; Moreau, G.; Patriarche, G.; Aubin, G.; Landreau, J.; Lelarge, F.; Ramdane, A.

doi:10.1049/el:20063868

Cited by 28 publications

(11 citation statements)

References 6 publications

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“…The ability to reduce the mode beating linewidth to 2 kHz by an inclusion of an optical filter was demonstrated by Shen et al [294] on a 2.5 mm long, 17 GHz Qdash mode-locked laser, and further showed that reduction in the optical confinement factor also decreased the mode beating linewidth [295]. In general, these high performance characteristics were attributed to the reduction in the active region dimensionality resulting in reduced interaction of the optical mode with the amplified spontaneous emission, and large population inversion, which reduces the phase noise, apart from FWM process [250,296]. On the other hand, Akrout et al [297] exploited the external cavity length based high quality factor for initial phase noise reduction in a 30.3 GHz InAs/InGaAsP/InP Qdash self-pulsating mode-locked laser.…”

Section: Self-pulsationmentioning

confidence: 94%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Self-pulsationmentioning

confidence: 94%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…5). This was the lowest linewidth ever reported for any passively mode-locked semiconductor laser, leading to an estimated high frequency timing jitter less than ~100 fs 41 . This low noise behaviour is attributed to the QDash active layer small optical confinement that reduces ASE coupling to the optical mode 37 .…”

Section: Self-pulsating Mode Locked Inas/inp Quantum Dash Lasersmentioning

confidence: 78%

“…Fourier transform ~800 fs pulses have been generated at a very high repetition rate of 134 GHz (Figure 4) without any pulse compression scheme using passively mode locked devices emitting at 1.56 µm [40][41] . One unique feature of these QDash based lasers is that mode locking has been obtained using a one-section Fabry-Perot laser, i.e.…”

Section: Self-pulsating Mode Locked Inas/inp Quantum Dash Lasersmentioning

confidence: 99%

Recent advances in long wavelength quantum dot based lasers

et al. 2008

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This paper presents recent progress in the field of semiconductor lasers based on self-assembled quantum dots grown either on GaAs or InP substrates. Quantum dot (QD) based lasers are attracting a lot of interest owing to their remarkable optoelectronic properties that result from the three dimensional carrier confinement. They are indeed expected to exhibit much improved performance than that of quantum well devices. Extremely low threshold currents as well as high temperature stability have readily been demonstrated in the InAs/GaAs material system. The unique properties of quantum dot based active layers such as broad optical gain spectrum, high saturation output power, ultrafast gain dynamics and low loss are also very attractive for the realization of mode-locked lasers. Recent results in the field of directly modulated InAs/GaAs lasers emitting in the 1.3 µm window are discussed. We report in particular on temperature independent linewidth enhancement factor (or Henry factor α H ) up to 85°C. This is a key parameter which determines many laser dynamic properties. Optical feedback insensitive operation of specifically band-gap engineered devices, compatible with high bit rate isolator-less transmission is also reported at 1.55 µm. Monolithic mode locked lasers based on InAs/InP quantum dashes have been investigated for 1.55 µm applications. Subpicosecond pulse generation at very high repetition rates (> 100 GHz) is reported for self-pulsating one-section Fabry Perot devices. Specific applications based on these compact pulse generators including high bit rate clock recovery are discussed.

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“…Later on, reducing the optical confinement factor was show to have a similar effect on the beating linewidth [79]. It was postulated that this was owning to the reduced optical mode interactions with the amplified spontaneous emission, and large population inversion, leading to a reduced phase noise [73,80].…”

Section: Inas/inp Qdash Mode-locked Lasersmentioning

confidence: 96%