Subfemtojoule 0.15 μm InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

Suehiro, Haruyoshi; Shima, M.; Shimura, T.; Hara, Naoki

doi:10.1109/gaas.1996.567741

Cited by 3 publications

(4 citation statements)

References 8 publications

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“…6, the output voltage is derived by solving the following equations, where only the logic level of changes to high, while that of remains low. The current equations corresponding to two output nodes are (2) (3)…”

Section: Clock Drivermentioning

confidence: 99%

“…One effective way to decrease power consumption is to reduce the supply voltage. Direct-coupled field-effect transistor (FET) logic (DCFL) circuits based on i-InGaAs channel pseudomorphic heterojunction FET's (HJFET) on GaAs substrates [1], [2] are suitable for this, because these FET's have high cutoff frequency and low drain current saturation voltage. We have already demonstrated that DCFL D-FF's based on these FET's operated at 10 Gb/s with supply voltage below 1 V [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

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A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

Fujii

Numata

Maeda

et al. 1998

IEEE Trans. VLSI Syst.

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An 8:1 multiplexer (MUX) and a 1:8 demultiplexer (DEMUX) for 2.4-Gb/s optical communication systems have been developed using 0.35-m GaAs heterojunction fieldeffect transistors (FET's). To ensure timing margins, a new timing generator with latches and new clock buffers with cross-coupled inverters have been developed. These large-scale integrations (LSI's) operate at over 2.4 Gb/s with a power consumption of 150 mW (MUX) and 170 mW (DEMUX) at a supply voltage of 0.7 V, and at over 5 Gb/s with power consumption of 200 mW at a supply voltage of 0.8 V.

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Section: Clock Drivermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

Fujii

Numata

Maeda

et al. 1998

IEEE Trans. VLSI Syst.

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“…DCFL technology has been demonstrated utilizing highelectron mobility transistors (HEMT's) in the AlGaAs/GaAs material system [2], [5]- [8]. In addition, subfemtojoule performance has been demonstrated in the pseudomorphic InGaP/InGaAs/GaAs material system using HEMT technology [9]. The lattice-matched InP material system offers several advantages over the aforementioned material systems owing to enhanced electron mobilities, higher sheet carrier charge densities, and lower knee voltages.…”

Section: Introductionmentioning

confidence: 98%

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

Mahajan

Cueva

Arafa

et al. 1997

IEEE Electron Device Lett.

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The fabrication and characterization of an 11-stage ring oscillator utilizing integrated enhancement-and depletionmode (E/D-mode) high-electron mobility transistors (HEMT's) in the lattice-matched InAlAs/InGaAs/InGaAs material system is demonstrated. The 0.5-m gate length depletion-mode HEMT's (D-HEMT's) used in the circuit exhibit a threshold voltage (V V V T T T ) of 0365 mV with a standard deviation of 19 mV, while the enhancement-mode HEMT's (E-HEMT's) with identical gate length display a V V V T T T of 195 mV with a standard deviation of only 9 mV. The unity current gain cutoff frequency (f f f t t t ) for both devices is 70 GHz. The extremely high uniformity of the threshold voltages of these devices allowed for the implementation of a ring oscillator utilizing direct coupled FET logic (DCFL). At a supply voltage of 0.4 V, a room temperature propagation delay time ( pd ) of 22.4 ps/stage, and a corresponding power dissipation of 120 W/stage is measured, yielding a power delay product (PDP) of 2.65 fJ/stage. To the best of the authors' knowledge, this is the first demonstration of a circuit employing E/D-HEMT technology in the lattice-matched InP-based material system.

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“…In 1995, Saito et al developed the best ever reported 60 GHz MMIC image-rejection down-converter using w x GaInPrInGaAsrGaAs HEMTs as active devices 8 . Moreover, in 1996, Suehiro et al used subquarter micron GaInPrInGaAsrGaAs HEMTs as active devices for DCFL circuits, and they obtained both high-speed and subfemtow x joule operation IC under a 1 V supply voltage 9 .…”

Section: Introductionmentioning

confidence: 99%

S-band MMIC amplifier using Ga0.51In0.49P/GaAs MISFETS as active devices

Lin

Lan³

et al. 1999

Microw. Opt. Technol. Lett.

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The first MMIC amplifier using Ga0.51In0.49P/GaAs MISFETs grown by GSMBE as active devices was fabricated in our laboratory. This monolithic amplifier achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were consistent with simulated results, and demonstrated the high potential of the applications of Ga0.51In0.49P/GaAs MISFETs to MMICs. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 188–190, 1999.

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Subfemtojoule 0.15 μm InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

Cited by 3 publications

References 8 publications

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

S-band MMIC amplifier using Ga0.51In0.49P/GaAs MISFETS as active devices

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