Subband spectroscopy by surface channel tunneling

Quinn, John J.; Kawamoto, G.H.; McCombe, B. D.

doi:10.1016/0039-6028(78)90489-2

Cited by 75 publications

(26 citation statements)

References 13 publications

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“…Recently, two-dimensional semiconducting materials [1][2][3][4][5][6][7] have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing 8,9 . To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling [10][11][12][13][14][15][16] . Here we demonstrate band-to-band tunnel field-effect transistors (tunnelFETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature.…”

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confidence: 99%

“…Tunnel-FETs (TFETs) using BTBT [10][11][12][13][14][15][16] are promising candidates for the achievement of subthermionic SS. In spite of the high level of interest in TFETs with 2D channel materials, and experimental work 24,25 in this direction using electrostatic doping techniques, there has not until now been a successful experimental demonstration of a TFET-or of any transistor based on a 2D material with subthermionic SS.…”

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A subthermionic tunnel field-effect transistor with an atomically thin channel

Sarkar

Xie

Liu

et al. 2015

Nature

846

692

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The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing. To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling. Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a low tunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our device is at present the thinnest-channel subthermionic transistor, and has the potential to open up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive biosensors and gas sensors.

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confidence: 99%

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A subthermionic tunnel field-effect transistor with an atomically thin channel

Sarkar

Xie

Liu

et al. 2015

Nature

846

692

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“…Stuetzer's and Shockley's experiments have formed the foundation of TFET-like devices. [13,14] Modern TFETs having the MOS structure were proposed by Quinn et al [15] and independently demonstrated by Baba. [16] Appenzeller et al first demonstrated sub-60 mV/ decade operation using a carbon-nanotube TFET.…”

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confidence: 99%

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

2017

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The tunnel field-effect transistor (TFET) is one of the candidates replacing conventional metal-oxide-semiconductor field-effect transistors to realize low-power-consumption large-scale integration (LSI). The most significant issue in the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material having a low band-to-band tunneling probability and is not favored for the channel. However, a new technology to enhance tunneling current in Si-TFETs utilizing the isoelectronic trap (IET) technology was recently proposed. IET technology provides a new approach to realize low-power-consumption LSIs with TFETs. The present paper reviews the state-of-the-art research and future prospects of Si-TFETs with IET technology.

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“…1 To the best of our knowledge, this type of device structure was originally studied in 1978 by Quinn, Kawamoto, and McCombe to understand the physics of a quasi-two-dimensional surface channel. 2 This structure differs from a conventional MOSFET in that the doping of the source region is opposite to that of the drain region, as schematically shown in Fig. 1.…”

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confidence: 98%