Sub-picosecond pulse generation at 134 GHz using a quantum dash-based Fabry-Perot laser emitting at 1.56 /spl mu/m

Gosset, C.; Merghem, K.; Martinez, A.; Moreau, G.; Patriarche, G.; Aubin, G.; Landreau, J.; Lelarge, F.; Ramdane, A.

doi:10.1109/ofc.2006.215715

Cited by 16 publications

(23 citation statements)

References 5 publications

(5 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As discussed in section 3.2.2, a 45 GHz CW mode locking from monosection InAs/InP Qdot/Qdash laser was first demonstrated by Renaudier et al [120]. Following this report was the detailed investigation by Gosset et al [287] who demonstrated 134 GHz pulse generation from 340 µm long 6-stack InAs/InGaAsP DaWELL laser under CW operation. The 1.56 µm device exhibited deconvolved sub-picosecond pulse width of 800 fs without any pulse compression scheme and 0.46 time bandwidth product.…”

Section: Self-pulsationmentioning

confidence: 89%

“…Passive mode locking employing classical two-section InAs/InGaAsP Qdash laser with one gain and one absorber section was first demonstrated by Gosset et al [287] who measured 47 kHz RF linewidth from a 6-stack Qdash laser with 940 µm gain and 180 µm absorber sections. A pulsation frequency of 43.6 GHz was measured at 169 mA CW current and with no significant effect of applied bias on the absorber section.…”

Section: Two-sectionmentioning

confidence: 99%

See 1 more Smart Citation

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Self-pulsationmentioning

confidence: 89%

Section: Two-sectionmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…There has been extensive study of semiconductor MLLs based on quantum well (QW) and bulk active layers [4,5,11,17,18,30,31]. More recently, quantum dash (QDash) and quantum dot (QD)-based MLLs have attracted significant attention [9,16,23,40]. One of the most interesting features of QDash lasers is that passive mode-locking can be easily achieved without any saturable absorber, and that the free-running spectral linewidth (FRSL) of modebeating note in these passively locked QDash lasers is very narrow, one or two orders of magnitude narrower than those in their QW or bulk counterparts [16,23].…”

Section: Introductionmentioning

confidence: 99%

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

et al. 2009

View full text Add to dashboard Cite

Several applications are pushing the development of high performance mode-locked lasers: generation of short pulses for extremely high bit rate transmission at 100 Gb/s and beyond, all-optical MLLs. For instance, they are very compact, with a length usually not exceeding 4 mm. The pulse repetition rate can be as high as 500 GHz [4]. They are very efficient, having a high power conversion efficiency.

show abstract

“…But unlike the MLLD that have an absorber element that locks the static phases of the longitudinal modes by periodically creating a positive net gain window when saturated by the optical field inside the laser cavity, the laser used in this, which is a single section semiconductor lasers, has other types of nonlinear processes in the gain medium, such as four wave mixing, that are able to set up a phase correlation among the modes which also become equally separated in frequency despite intra-cavity dispersion. This kind of ML mechanism has been experimentally observed for quantum-well [3,8], quantum-dash [9] and quantum-dot [10] based gain media. However, the need of external dispersion compensation in order to obtain near transform limited pulses [3,13].…”

Section: Passive Modementioning

confidence: 64%

Study of the stabilization of a semiconductor mode-lock laser using hybrid mode-lock and optical feedback

Alves¹,

Abreu²,

Cabral³

et al. 2014

SPIE Proceedings

View full text Add to dashboard Cite

In this study we present a scheme for modelocked laser stabilization that narrows the RF linewidth and lowers the timing jitter. The aim of this scheme is to stabilize the pulse repetition frequency (PRF) to be used in an absolute long distance measurement technique. In the most of the stabilization schemes, PRF is kept constant, however in this scheme; the PRF is required to perform a sweep, while achieving a relative error in the order of 10 -8 or better within the tuning range. The laser used is a symmetrical cladding single section InAs/InP quantum dash emitting at 1550 nm and with a pulse repetition frequency of 4.37 GHzThe techniques proposed for stabilization are hybrid mode-locking and optical feed-back. In hybrid modelocking, the PRF is locked to the local oscillator (LO), lowering the RF linewidth and the jitter. By performing a frequency modulation of LO, the PRF is modulated. The optical feedback technique uses a fraction of the output radiation that is fed back into the laser cavity after a certain delay. If the delay line is correctly adjusted, this will reduce the timing jitter of laser. The progress in this technique is in the synchronization of the LO with the delay line, combining the benefits of both techniques. Performing a sweep in PRF, the synchronization circuit adjusts the delay line to match incoming pulses within the cavity. Preliminary results are showed.

show abstract

Sub-picosecond pulse generation at 134 GHz using a quantum dash-based Fabry-Perot laser emitting at 1.56 /spl mu/m

Abstract: We report on 800 fs pulse generation, at 134 GHz, using a Fabry-Perot quantum dash laser at 1.56 Mm. A 50 kHz RF spectral linewidth at 42 GHz is also demonstrated.

Cited by 16 publications

References 5 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Study of the stabilization of a semiconductor mode-lock laser using hybrid mode-lock and optical feedback

Contact Info

Product

Resources

About