2015 IEEE MTT-S International Microwave Symposium 2015
DOI: 10.1109/mwsym.2015.7167151
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Sub-millimeter wave InP technologies and integration techniques

Abstract: In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semic… Show more

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Cited by 18 publications
(3 citation statements)
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References 13 publications
(9 reference statements)
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“…For the time being, several alternatives to generate the plasmonic signals at THzband frequencies have been considered. For frequencies under 1 THz, standard Silicon (Si) Complementary Metal-Oxide-Semiconductor (CMOS) technology [8], Silicon Germanium (SiGe) technology [25] and III-V semiconductor technologies such as Gallium Nitride (GaN), Gallium Arsenide (GaAs), and Indium Phosphide (InP) [26] can be utilized to generate a high-frequency electrical signal. By means of a plasmonic grating structure, a SPP wave could be then launched to the metamaterial-based antennas [6].…”
Section: Feeding and Control Of The Antennasmentioning
confidence: 99%
“…For the time being, several alternatives to generate the plasmonic signals at THzband frequencies have been considered. For frequencies under 1 THz, standard Silicon (Si) Complementary Metal-Oxide-Semiconductor (CMOS) technology [8], Silicon Germanium (SiGe) technology [25] and III-V semiconductor technologies such as Gallium Nitride (GaN), Gallium Arsenide (GaAs), and Indium Phosphide (InP) [26] can be utilized to generate a high-frequency electrical signal. By means of a plasmonic grating structure, a SPP wave could be then launched to the metamaterial-based antennas [6].…”
Section: Feeding and Control Of The Antennasmentioning
confidence: 99%
“…However, many recent advancements with di erent technologies is finally closing the so-called THz gap. For example, on the one hand, in an electronic approach, III-V semiconductor technologies have demonstrated record performance in terms of output power, noise figure, and power-added e ciency at sub-THz frequencies, and are quickly approaching the 1 THz [9,14]. On the other hand, in an optics approach, Quantum Cascade Lasers are rising as potential candidates for high-power THz-band signal generation [12,16].…”
Section: Introductionmentioning
confidence: 99%
“…Traditionally, the lack of compact and efficient THz signal sources and detectors, able to operate at room temperature, has limited the use of the THz band. However, major progress in the last decade [4], [5] is finally helping to close the THz gap.…”
Section: Introductionmentioning
confidence: 99%