Sub-50-mV Nanoelectromechanical Switch Without Body Bias

Saha, Sumit; Baghini, Maryam Shojaei; Goel, Mayank; Rao, V. Ramgopal

doi:10.1109/ted.2019.2951615

Cited by 12 publications

(3 citation statements)

References 26 publications

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“…While this speed may be acceptable for low power switching applications using CMOS and NEM relay switch based circuits, vacuum electronics boasts inherently much higher frequencies than semiconductor devices. Thus, the present approach is not the most ideal yet for creating complementary devices in nanoscale vacuum electronics but an initial attempt using a proven NEM actuation technology. , Future innovative concepts for complementary operation without such mechanical limitations could boost the operation frequency to the full potential of vacuum electronics. For example, if photoemission triggered by laser pulses , or other light sources could be engineered to provide the asymmetry needed for complementary operation instead of just serving as a source of electrons, it could be a better alternative to mechanical actuation from a speed point of view.…”

Section: Results and Discussionmentioning

confidence: 98%

“…Combining the two key features described in the illustrative example above results in the complementary VFET device structures shown in Figure . The device structure is similar to the NEM relay switch except that no pull-in and physical contact is formed between the source and the drain. − A large area pad is placed underneath the center of the cantilever as the gate, and a small pad is under the end of the cantilever. The cantilever with the tip and the plain small pad become the source and drain for the n-type VFET, respectively; conversely, the plain cantilever and the small pad with a tip become the source and drain for the p-type VFET, respectively.…”

Section: Results and Discussionmentioning

confidence: 99%

“…Decreasing the source–drain gap increases the surface electric field for electron flow. The NEM-driven gate modulation has been a successful technology − in ultralow-power electronics demonstrating abrupt switching, zero gate leakage current in the on-state, high on/off current ratios, and subthreshold swing substantially less than 60 mV/dec. In addition to utilizing this novel gate modulation, the electron field emission efficiency is tuned favorably here by sharpening the physical structure of the emitter.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nanoscale Complementary Vacuum Field Emission Transistor

Han

Seol

Kim

et al. 2020

ACS Appl. Nano Mater.

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Nanoscale vacuum channel transistors based on field emission have gained attention recently, and device demonstrations using various material systems have been reported. Whereas solid-state electronics leverages n- and p-type semiconductors for complementary logic circuits, vacuum electronics uses only electron transport as no p-type vacuum devices exist. Here, we propose a complementary vacuum field emission transistor (VFET) using electron-only field emission mechanism. By combining the rectifying characteristics of the field emission current due to an asymmetric source and drain (cathode and anode) structure and the source-to-drain gap modulation by nanoelectromechanical actuation due to the gate voltage, we configured the VFET to turn on only when a high positive (negative) voltage is applied to both the gate and drain for n-type (p-type) VFET. The complementary devices are connected in series to configure an inverter as a representative logic gate to demonstrate the possibilities.

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Section: Results and Discussionmentioning

confidence: 98%

Section: Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanoscale Complementary Vacuum Field Emission Transistor

Han

Seol

Kim

et al. 2020

ACS Appl. Nano Mater.

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On-chip mechanical computing: status, challenges, and opportunities

Wang

Zhang

Liu

et al. 2023

Chip

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Volatile or non-volatile switching? Establishing design parameters for metal-contact relays using ON/OFF hysteretic behavior (RT to 300 °C)

Kumar

Arya

Singh

2021

Applied Physics Letters

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This Letter presents a systematic evaluation of the adhesion force between sub-micrometer metal (molybdenum) surfaces in microelectromechanical (MEMS) relays for a range of temperatures (RT to 300 °C). As adhesion force controls whether an electrostatic actuated MEMS relay will detach or remain in contact once the power is turned-off, therefore, it is essential to know the amount of adhesion force present between the interacting electrodes. We present a theoretical scheme that allows direct extraction of the adhesion force from experimentally measured data (ON/OFF-voltage) that can precisely determine the adhesion force from the micro- to nanoregime. Our model identified a clear correlation between the two properties, i.e., ON/OFF-voltage and adhesion force and applicable for any arbitrary material systems. The model is validated by experimental results with varying design parameters. The results confirm that the decreasing nature of pull-OFF voltage (13.9 V to 10.8 V) with increasing temperature ensures a large hysteresis window (∼4.7 V at 300 °C) for n = 3 × 6 and W/L−1 ∼ 6.67, where n is the contact-area dimension and W/L−1 is related to movable electrode geometry. The proposed method can be adopted for the precise designing of various logic relays or memory elements suitable for a wide temperature range.

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Sub-50-mV Nanoelectromechanical Switch Without Body Bias

Cited by 12 publications

References 26 publications

Nanoscale Complementary Vacuum Field Emission Transistor

Nanoscale Complementary Vacuum Field Emission Transistor

On-chip mechanical computing: status, challenges, and opportunities

Volatile or non-volatile switching? Establishing design parameters for metal-contact relays using ON/OFF hysteretic behavior (RT to 300 °C)

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