Volatile or non-volatile switching? Establishing design parameters for metal-contact relays using ON/OFF hysteretic behavior (RT to 300 °C)

Kumar, Sushil; Arya, Dhairya Singh; Singh, Pushpapraj

doi:10.1063/5.0025062

Cited by 12 publications

(5 citation statements)

References 18 publications

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“…Material with a high Young's modulus has high stiffness and offers less deflection due to stress. 1,12 This thin membrane can also be affected by temperature variations. Temperature variations impact the stress in a thin film.…”

Section: Effect Of the Stress And Temperature Variationmentioning

confidence: 99%

“…This bending depends on the stiffness of the beam and Hence, on Young's modulus of the material. Material with a high Young's modulus has high stiffness and offers less deflection due to stress 1,12 …”

Section: Device Designmentioning

confidence: 99%

“…Hence, capacitance and isolation will not alter with voltage applied beyond pull‐in. Molybdenum is used as the beam material to obtain robustness against stress and temperature 12 …”

Section: Introductionmentioning

confidence: 99%

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Ultrabroadband (DC–80 GHz) RF MEMS DC/capacitive load shunt switch

Narang,

Shrivastava,

Basu

et al. 2023

Micro & Optical Tech Letters

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This study presents the design and fabrication of a novel direct current (DC)/capacitive radio frequency (RF) Micro‐Electro‐Mechanical Systems (MEMS) switch in the ultrabroadband range from DC to 80 GHz. This proposed RF MEMS switch consists of two arms, with one arm providing a DC loading state (), whereas the second arm provides a capacitive loading state () to the ground when pull‐in voltage is applied. Insertion loss less than 1.85 dB and return loss better than 10 dB are achieved in the OFF state () from DC to 80 GHz (no pull‐in voltage is applied). Due to the novel design topology, this switch can act as a DC‐only switch (0–17 GHz) that provides isolation better than 25 dB during the state. A capacitive‐only switch (48–80 GHz) provides isolation better than 17 dB. This proposed structure can act as either DC(S1) or a capacitive () switch (17–48 GHz) and provides isolation better than 10 dB in either state. This proposed switch finds its best application in reconfigurable circuits like phase shifters due to switching between DC and capacitive loading during the On state from 17 to 48 GHz. The proposed switch's measured pull‐in and lift‐off voltages are 3.5 and 2.85 V, respectively.

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Section: Effect Of the Stress And Temperature Variationmentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

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Ultrabroadband (DC–80 GHz) RF MEMS DC/capacitive load shunt switch

Narang,

Shrivastava,

Basu

et al. 2023

Micro & Optical Tech Letters

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“…However, for the proposed phase shifter, only capacitive-ON and DC-ON states are the required states, and the OFF state is the unused state. Molybdenum is used as a switching material to provide robustness against stress and temperature variations [9]. In the S 1 state, E 1 and E 2 ends will directly contact the ground plane.…”

Section: Rf Mems Dc/capacitive Switch Designmentioning

confidence: 99%

“…Moreover, RF MEMS switches can be easily integrated into the radio frequency integrated circuits (RFICs). Various analog and digital phase shifters have been discussed in the literature [5][6][7][8][9][10][11][12][13]. Analog-type phase shifters are more affected by noise than digital phase shifters [1].…”

Section: Introductionmentioning

confidence: 99%

A Loaded Line 2-bit Phase Shifter Using RF MEMS DC/Capacitive Switches

Narang¹,

Shrivastava²,

Basu³

et al. 2023

PIER Letters

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This letter presents the fabrication and measurement of a novel loaded line phase shifter design providing four different phase shifts using only two RF MEMS switches. The flexibility of choosing DC or capacitive load depending upon the phase shift required in a single RF MEMS switch makes the phase shifter compact and requires less number of proposed switches. The RF MEMS switch has been designed to provide isolation better than 10 dB in both DC and capacitive states from 16 to 45 GHz. Due to the designed RF MEMS beam switching between DC and capacitive loading, the proposed phase shifter provides a 2-bit phase shift using only two switches. The measured phase shifter has the maximum insertion loss of 0.8 dB with a bandwidth of 8 GHz from 16 to 24 GHz. The return loss is better than 10 dB for all four states. The maximum Root-Mean-Square (RMS) insertion loss error is 0.28 dB, and the phase shift error is 0.98 • . The proposed phase shifter is fabricated using the surface micromachining on the sapphire substrate and occupies an area of 3.931 mm 2 .

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