Sub-200 Ω·µm Alloyed Contacts to Synthetic Monolayer MoS2

Strain-Enhanced Mobility of Monolayer MoS2

“…However, because our devices have relatively long channels and our improvements in μ FE and I D do not depend on channel length (see Supporting Information Figure S7), we expect the contribution of contact resistance in our measurements to be relatively small. 52 Thus, we believe that the electrical performance improvements observed here are mostly related to electronic transport in the MoS 2 channel, i.e., lower intervalley scattering and effective mass.…”

“…Tensile strain is also expected to change the curvatures of the conduction band valleys, leading to decreased electron effective mass. ,,, This is similar to the reduced electron effective mass with strain in silicon nMOS transistors, which leads to increased mobility. , Applying tensile strain to 2D transistors has also been suggested to lower Schottky barriers at the source and drain contacts, ,, potentially leading to lower contact resistance. However, because our devices have relatively long channels and our improvements in μ FE and I D do not depend on channel length (see Supporting Information Figure S7), we expect the contribution of contact resistance in our measurements to be relatively small . Thus, we believe that the electrical performance improvements observed here are mostly related to electronic transport in the MoS 2 channel, i.e., lower intervalley scattering and effective mass.…”

Fast-Response Flexible Temperature Sensors with Atomically Thin Molybdenum Disulfide

“…We used two-point measurements for the sensors, and their electrical characteristics are dominated by the MoS 2 channel properties rather than any contact effects due to micrometer-scale channel lengths and a comparatively low contact resistance ( R C ) with Au contacts (see Figure S4). , …”

“…We further investigate the response time of our flexible MoS 2 temperature sensors by fabricating thin metal microheaters (Ti/Pd 3/37 nm) on top of the Al 2 O 3 passivation layer (Figure a–c). We apply a negative voltage pulse with an amplitude of V p = −1.5 V, a period of 1 ms, and a 50% duty cycle to the heater while the sensor is direct-current biased with the voltage V = 2 V. We apply a negative V p to avoid accidentally “turning on” the MoS 2 sensor under the metal heater, because such CVD-grown MoS 2 devices are n-type and in a transistor configuration they turn on with positive gate voltages. ,,,, In Figure d, we observe that the MoS 2 sensor current increases when the heater is pulsed, which indicates that the heating dominates. (See additional discussion and data in Section S11 in the Supporting Information.)…”

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2

“…The potential of transition metal dichalcogenides (TMDs) for logic applications has been explored for many years since the successful demonstration of the single-layer MoS 2 transistor . The ultimate body thickness, good stability, and high mobility of monolayer (ML) TMDs make them attractive candidates as future channel materials in the front-end-of-line (FEOL) or back-end-of-line (BEOL). − In recent years, researchers have made many efforts to improve the performance of ML TMD FETs, including (a) contact metals, − (b) contact structures, − (c) dielectric materials, − and (d) wafer-scale synthesis. − Those achievements have resulted in a substantially increased interest of the semiconductor industry in ML TMDs for transistor applications. However, there are still many open questions to be addressed, in particular with regard to scaled TMD FETs to allow for a truenot projectedcomparison between existing silicon technology and the emerging TMD-based opportunities.…”