Sub-100-nm lithographic imaging with an EUV 10X microstepper

Goldsmith, J. E. M.; Berger, Kurt W.; Bozman, Dan R.; Cardinale, Gregory Frank; Folk, Daniel R.; Henderson, Craig C.; O’Connell, Donna J.; Ray-Chaudhuri, Avijit K.; Stewart, Kenneth D.; Tichenor, Daniel A.; Chapman, Henry N.; Gaughan, Richard J.; Hudyma, Russell M.; Montcalm, Claude; Spiller, Eberhard; Taylor, John S.; Williams, Jeffrey; Goldberg, Kenneth A.; Gullikson, Eric M.; Naulleau, Patrick; Cobb, Jonathan

doi:10.1117/12.351097

Cited by 21 publications

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“…Microfield static exposure tools [1][2][3] have and are expected to continue to play a crucial role in the development and commercialization of extreme ultraviolet (EUV) lithography [4].…”

Section: Introductionmentioning

confidence: 99%

A design study for synchrotron-based high-numerical-aperture scanning illuminators

Naulleau

Denham

Hoef

et al. 2004

Optics Communications

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Scanning illumination systems provide for a powerful and flexible means of controlling illumination coherence properties. In these systems, the desired illumination divergence is effectively synthesized through a scanning process. This method has recently been used at extreme ultraviolet (EUV) wavelengths to implement a programmable pupil fill microfield exposure system employed to lithographically characterize a 0.1-numerical aperture (NA) alphaclass EUV stepper optic. The specifics of the implementation used in that case, however, make it difficult to directly extend the implementation to higher NA optics such as the 0.3-NA MicroExposure Tool (MET) optic currently being developed for advanced lithographic studies. Here we present scanning illuminator configurations suitable for implementing high-NA lithography capabilities at a synchrotron beamline. In particular we consider the application to the 0.3-NA MET optic with a design field of view of 1×3 mm at the object plane.

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“…Microfield static exposure tools [1][2][3] have and are expected to continue to play a crucial role in the development and commercialization of extreme ultraviolet (EUV) lithography [4].…”

Section: Introductionmentioning

confidence: 99%

A design study for synchrotron-based high-numerical-aperture scanning illuminators

Naulleau

Denham

Hoef

et al. 2004

Optics Communications

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“…The demand for early tools has been met with microfield exposure tools which trade off field size and speed for greatly reduced complexity. Such microfield tools have been crucial to sub-0.2-NA EUV development in the past [2][3][4] and currently serve as the only source for high-NA EUV printing [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

EUV microexposures at the ALS using the 0.3-NA MET projection optics

et al. 2005

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The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure Tool (MET) optic has given rise to a new class of ultra-high resolution microexposure stations. Once such printing station has been developed and implemented at Lawrence Berkeley National Laboratory's Advanced Light Source. This flexible printing station utilizes a programmable coherence illuminator providing real-time pupil-fill control for advanced EUV resist and mask development.The Berkeley exposure system programmable illuminator enables several unique capabilities. Using dipole illumination out to σ=1, the Berkeley tool supports equal-line-space printing down to 12 nm, well beyond the capabilities of similar tools. Using small-sigma illumination combined with the central obscuration of the MET optic enables the system to print feature sizes that are twice as small as those coded on the mask. In this configuration, the effective 10×-demagnification for equal lines and spaces reduces the mask fabrication burden for ultra-high-resolution printing. The illuminator facilitates coherence studies such as the impact of coherence on line-edge roughness (LER) and flare. Finally the illuminator enables novel print-based aberration monitoring techniques as described elsewhere in these proceedings.Here we describe the capabilities of the new MET printing station and present system characterization results. Moreover, we present the latest printing results obtained in experimental resists. Limited by the availability of highresolution photoresists, equal line-space printing down to 25 nm has been demonstrated as well as isolated line printing down to 29 nm with an LER of approaching 3 nm.

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“…I Most of the R&D work in EUV lithography is currently performed through a collaborative effort between U.S. national laboratories and a consortium of semiconductor companies.2y3 Currently, all the EUV lithography imaging studies are performed with a 10x system developed several years ago and upgraded last year with new multilayer-coated reflective optics. 4,5 We are now building an alpha-class EUV lithography system, called the Engineering Test Stands (ETS), which will be a 4x system capable of exposing at least 10 wafer per hour. The design for this ETS system incorporates multiple reflective optics: (1) four condenser optics (Cl to C4) in the illumination system (2) a reflective mask consisting of a patterned absorbing layer on a multilayer mirror; and (3) four precision projection optics (Ml to M4) to image the mask pattern onto a photoresist-coated wafer.6 Seven of the nine surfaces operate at near-normal incidence and require EUV-reflective multilayer coatings.…”

Section: Introductionmentioning

confidence: 99%

<title>Multilayer coated optics for an alpha-class extreme ultraviolet lithography system</title>

et al. 1999

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We present the results of coating the first set of optical elements for an alpha-class extreme-ultraviolet (EUV) lithography system, the Engineering Test Stand (ETS). The optics were coated with Mo/Si multilayer mirrors using an upgraded DCmagnetron sputtering system. Characterization of the near-normal incidence EUV reflectance was performed using synchrotron radiation from the Advanced Light Source at the Lawrence Berkeley National Laboratory. Stringent requirements were met for these multilayer coatings in terms of reflectance, wavelength matching among the different optics, and thickness control across the diameter of each individual optic. Reflectances above 65% were achieved at 13.35 nm at near-normal angles of incidence. The run-to-run reproducibility of the reflectance peak wavelength was maintained to within 0.4%, providing the required wavelength matching among the seven multilayer-coated optics. The thickness uniformity (or gradient) was controlled to within +0.25% peak-to-valley (P-V) for the condenser optics and -+O.l% P-V for the four projection optics, exceeding the prescribed specification for the optics of the ETS.

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Sub-100-nm lithographic imaging with an EUV 10X microstepper

Cited by 21 publications

References 0 publications

A design study for synchrotron-based high-numerical-aperture scanning illuminators

A design study for synchrotron-based high-numerical-aperture scanning illuminators

EUV microexposures at the ALS using the 0.3-NA MET projection optics

<title>Multilayer coated optics for an alpha-class extreme ultraviolet lithography system</title>

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