&lt;title&gt;Multilayer coated optics for an alpha-class extreme ultraviolet lithography system&lt;/title&gt;

Montcalm, Claude; Grabner, R. Fred; Hudyma, Russell M.; Schmidt, M.; Spiller, Eberhard; Walton, Christopher; Wedowski, Marco; Folta, James A.

doi:10.1117/12.371119

Cited by 5 publications

(4 citation statements)

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“…For a commercial EUVL tool, a spectral mismatch between the mirrors would translate to throughput reduction. Originally, a goal was set to match the reflectance peak position of all ETS optics to within ∆λ = ± 0.055 nm, which would ensure at least 85% of system throughput compared to the ideal wavelength-matching case 5 . Meeting this goal requires atomic-level repeatability of the coating process from one deposition run to another.…”

Section: Throughput Considerationsmentioning

confidence: 99%

“…This sputtering system was developed in partnership with Veeco Instruments, Inc. (Plainview, New York). It is a production-scale deposition tool, with a platter radius about 3 times larger than the platter radius of the laboratory tool that was used to coat the previous set (Set 1) of ETS projection optics 5 , as is demonstrated in Figure 3. The size of the new tool allows the coating of large optics (four optics of up to 470 mm in diameter can be accommodated in the deposition chamber) and the off-center mounting and spinning of optics with the possibility of graded coatings.…”

Section: Multilayer Deposition Systemmentioning

confidence: 99%

“…The first set (Set 1) is a developmental set of optics, designed to demonstrate printing of features down to the 100 nm size. The Set 1 projection mirrors are currently installed in the ETS and have successfully produced 100-nm resolution images 3,4,5 . The second -and final-set of projection optics for the ETS (Set 2) was designed with tighter substrate figure, finish and multilayer thickness specifications.…”

Section: Introductionmentioning

confidence: 99%

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<title>Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution</title>

et al. 2001

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One of the most critical tasks in the development of extreme ultraviolet lithography (EUVL) is the accurate deposition of reflective multilayer coatings for the mirrors comprising the EUVL tool. The second set (Set 2) of four imaging optics for an alpha-class EUVL system has been coated successfully. All four mirrors (M1, M2, M3, M4) were Mo/Si-coated during a single deposition run with a production-scale DC-magnetron sputtering system. Ideally, the multilayer coatings should not degrade the residual wavefront error of the imaging system design. For the present EUVL camera, this requirement is equivalent to depositing multilayer coatings that would add a figure error of less than 0.11 nm rms. In addition, all mirrors should be matched in centroid wavelength, in order to insure maximum throughput of the EUVL tool. In order to meet these constraints, the multilayer deposition process needs to be controlled to atomic precision. EUV measurements of the coated mirrors determined that the added figure errors due to the multilayer coatings are 0.032 nm rms (M1), 0.037 nm rms (M2), 0.040 nm rms (M3) and 0.015 nm rms (M4), well within the aforementioned requirement of 0.11 nm rms. The average wavelength among the four projection mirrors is 13.352 nm, with an optic-to-optic matching of 1σ=0.010 nm. This outstanding level of wavelength matching produces 99.3% of the throughput of an ideally matched four-mirror system. Peak reflectances are 63.8% (M1), 65.2% (M2), 63.8% (M3) and 66.7% (M4). The variation in reflectance values between the four optics is consistent with their high frequency substrate roughness. It is predicted that the multilayer coatings will not introduce any aberrations in the lithographic system performance, for both static and scanned images of 70 nm-dense features.

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Section: Throughput Considerationsmentioning

confidence: 99%

Section: Multilayer Deposition Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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<title>Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution</title>

et al. 2001

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“…Coating simultaneously all optics insures best wavelength matching and maximizes the throughput of the EUVL tool. During multilayer deposition, the Set 2 mirrors were spun around their optical axis and not around the center of their clear aperture, as was the case for the Set 1 optics 15 . The advantage of the Set 2 coating geometry is that all thickness errors are rotationally symmetric around the optical axis and affect all field points in the same way, easing the task of compensating errors in the alignment of the ETS.…”

Section: Multilayer Coatings For Set 2 Projection Opticsmentioning

confidence: 99%

<title>System integration and performance of the EUV engineering test stand</title>

Tichenor¹,

Ray-Chaudhuri²,

Replogle³

et al. 2001

SPIE Proceedings

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The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k 1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for fullfield images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

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Extreme Ultraviolet Lithography

2010

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Extreme ultraviolet (EUV) lithography represents a photon‐based technology for the mass production of semiconductor devices with small feature sizes. It offers the capability of replacing the conventional lithography by defining structural features below 32 nm, and facilitating the further miniaturization of silicon‐based chip technology down to its physical limits. Although the basic physics of the optics is the same as for conventional lithography operating with UV light at a wavelength of 193 nm, the technological step into the EUV range requires changes of all components of the system. This chapter provides an overview of the system architecture of a EUV scanner and the components; that is, the light sources emitting at a wavelength of approximately 13.5 nm, debris mitigation, grazing incidence collectors, multilayer mirrors and the optical system, and also the photo resist. The underlying fundamentals and technological requirements, as well as the current status of development of the essential components, are addressed.

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<title>Multilayer coated optics for an alpha-class extreme ultraviolet lithography system</title>

Cited by 5 publications

References 2 publications

<title>Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution</title>

<title>Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution</title>

<title>System integration and performance of the EUV engineering test stand</title>

Extreme Ultraviolet Lithography

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