2005
DOI: 10.1002/adma.200500484
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Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam

Abstract: An electron‐beam‐sensitive zinc naphthenate resist is used to pattern ZnO. Features as small as 7 nm and with an aspect ratio of ∼ 9 can be patterned. Size reduction to ∼ 5 nm is observed when these patterns are heat treated to give crystalline ZnO (see Figure). The functionality of ZnO is confirmed via photoluminescence studies.

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Cited by 63 publications
(54 citation statements)
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“…This is already promising due to the small lateral sizes of the nanostructures, which when patterned in arrays of 15 Â 15 nm 2 data bits, would lead to a storage density exceeding 1 Tbit/in 2 . Furthermore, nanostructure sizes achieved here are comparable to the highest resolutions demonstrated by other fabrication techniques, for example 5-10 nm with electron beam lithography [16] and less than 25 nm for nano-imprint lithography [17], whilst superior to more conventional UV photolithography. At present, however, short-timescale local oxidation by AFM is not suitable for large-scale device fabrication due to the lack of uniformity of the oxide structures.…”
Section: Short Timescale Oxidationsupporting
confidence: 55%
“…This is already promising due to the small lateral sizes of the nanostructures, which when patterned in arrays of 15 Â 15 nm 2 data bits, would lead to a storage density exceeding 1 Tbit/in 2 . Furthermore, nanostructure sizes achieved here are comparable to the highest resolutions demonstrated by other fabrication techniques, for example 5-10 nm with electron beam lithography [16] and less than 25 nm for nano-imprint lithography [17], whilst superior to more conventional UV photolithography. At present, however, short-timescale local oxidation by AFM is not suitable for large-scale device fabrication due to the lack of uniformity of the oxide structures.…”
Section: Short Timescale Oxidationsupporting
confidence: 55%
“…(c) A 30° tilted view of the horizontal nanowire-array-based five-segment monolithic superstructures [56]. Reproduced with permission An electron beam could also be used to directly generate ZnO nanowires by writing on a zinc naphthenate resist [287]. The resist became insoluble in toluene after exposure to a high energy electron beam, giving rise to negative patterns.…”
Section: Electron Beam Lithographymentioning
confidence: 99%
“…The resist became insoluble in toluene after exposure to a high energy electron beam, giving rise to negative patterns. The as-fabricated polycrystalline ZnO nanowires could be reduced to sub-10 nm dimensions after calcination [287].…”
Section: Electron Beam Lithographymentioning
confidence: 99%
“…NanoZnO, as an important inorganic material, exhibits low dielectric constant, large electromechanical coupling coefficient, high luminous transmittance, high catalysis activity, intensive ultraviolet and infrared absorption, etc. Therefore, nano-ZnO can potentially be applied to catalysts, gas sensors, semiconductors, varistors, piezoelectric devices, field-emission displays, and UV-shielding materials [5][6][7][8][9][10][11]. However, designing and modifying fabrics by nano-ZnO for high protection against UV radiation (UV-R, both UVA and UVB, falls into the regions of 400-315 and 315-280 nm, respectively, of the solar spectra) is a relatively new application.…”
Section: Introductionmentioning
confidence: 99%