Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. Herein, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure chemical vapor deposition method that allowed h-BN to be grown over a wide area (8 × 25 mm(2)). An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV-visible absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution transmission electron microscopy image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. This method of growing single-layer h-BN over large areas was also compatible with use of a sapphire substrate.

To modify oxide structure and introduce a thin conductive film on Li4Ti5O12, thermal nitridation was adopted for the first time. NH3 decomposes surface Li4Ti5O12 to conductive TiN at high temperature, and surprisingly, it also modifies the surface structure in a way to accommodate the single phase Li insertion and extraction. The electrochemically induced Li4+deltaTi5O12 with a TiN coating layer shows great electrochemical properties at high current densities.

An array of surface-immobilized proton-fueled DNA nanomachines is reversibly actuated by cycling of the solution pH between 4.5 and 9, producing a conformational change between a four-stranded and a double-stranded structure, which elongates or shortens the separation distance between the 5' and 3' end of the DNA. By labeling the DNA 3' end with a fluorophore and immobilizing it onto a thin-gold surface through its 5' thiol modification, the nanoscale motion of the DNA produces mechanical work to lift up and bring down the fluorophore from the gold surface by at least 2.5 nm and transduces this motion into an optical "on-and-off" nanoswitch.

We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

Electromechanical switching devices have been fabricated successfully employing vertically grown multiwalled carbon nanotubes ͑MWCNTs͒ from the prepatterned catalyst dots on the patterned device electrodes. The devices show various interesting switching characteristics depending on the length and the number of MWCNTs used. The device design not only simplifies the fabrication process, but also improves the integration density greatly. The device has a great potential in realizing technically viable nanoelectromechanical systems, such as switch, memory, fingers, or grippers.

We show that direct coupling of a dye-labelled DNA (acceptor) to a quantum dot (QD) donor significantly reduces the donor-acceptor distance and improves the FRET efficiency: a highly efficient FRET (approximately 88%) at a low acceptor-to-donor ratio of 2 has been achieved at the single-molecule level.

We report a successful synthesis of copper oxide nanowires with an average diameter of 90 nm and lengths of several micrometers by using a simple and inexpensive wet chemical method. The CuO nanowires prepared via this method are advantageous for industrial applications which require mass production and low thermal budget technique. It is found that the concentration and the quantity of precursors are the critical factors for obtaining the desired one-dimensional morphology. Field emission scanning electron microscopy images indicate the influence of thioglycerol on the dispersity of the prepared CuO nanowires possibly due to the stabilization effect of the surface caused by the organic molecule thioglycerol. The Fourier transform infrared spectrum analysis, energy dispersive X-ray analysis, X-ray diffraction analysis, and X-ray photoemission spectrum analysis confirm clearly the formation of a pure phase high-quality CuO with monoclinic crystal structure.

A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure is sandwiched between superconducting Nb contacts. When the current is passed perpendicular to the plane of the film a Josephson critical current (IC) is observed at 4.2 K, in addition to a magnetoresistance (MR) of ∼ 0.5 % at high bias. The hysteresis loop of the spin-valve structure can be cycled to modulate the zero field IC of the junction in line with the MR measurements. These modulations of resistance and IC occur both smoothly and sharply with the applied field. For each type of behaviour there is a strong correlation between shape of the MR loops and the IC modulation. PACS numbers: 74.50+r, 75.47.De, 85.25.Cp,