Sub-1 V supply 5 nW 11 ppm/°C resistorless sub-bandgap voltage reference

Mattia, Oscar E.; Klimach, Hamilton; Bampi, Sérgio

doi:10.1007/s10470-015-0582-3

Cited by 17 publications

(6 citation statements)

References 13 publications

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“…As shown in Figure 1, M4 and M5 work in the subthreshold region and they constitute the famous self-cascode structure [9]. PTAT voltage whose proportional to absolute temperature can be adjusted is generated through the repetition of self-cascode structure.…”

Section: Proposed Bandgap Reference Circuit Designmentioning

confidence: 99%

“…A typical MOSFET model that works in the subthreshold region is well-known [9]. When MOSFET works in the subthreshold region, the drain current is given by Figure 2.…”

Section: Proposed Bandgap Reference Circuit Designmentioning

confidence: 99%

“…However, this kind of circuit is complex in structure because it entails two start-up circuits and the use of resistor will enlarge the chip area. Oscar E. Mattia has proposed a self-biased bandgap voltage reference which features simple structure, low power consumption and high precision, but it only works in a narrow temperature range from 0 °C to 125 °C [9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

Dai¹,

Li²,

An³

et al. 2018

dtetr

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Abstract. In this paper, a bandgap voltage reference working with high precision in a wide temperature range is proposed. The proposed bandgap voltage reference adopts self-biased structure without using resistor and operational amplifier. It adopts 6 stages of the proportional to absolute temperature circuit to increase temperature range. And it uses linearity compensation circuit to improve the temperature coefficient. Supported by GSMC 0.13 µm technology, with 1.2V supply voltage, the proposed bandgap voltage reference can generate a steady 66 mV reference voltage. Within the temperature range of -100 to 145 °C, the temperature coefficient is 8.5486 ppm/°C and the line sensitivity is 0.19245 mV/V. And the bandgap voltage reference covers a core area of 0.00396 mm 2 .

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Section: Proposed Bandgap Reference Circuit Designmentioning

confidence: 99%

“…A typical MOSFET model that works in the subthreshold region is well-known [9]. When MOSFET works in the subthreshold region, the drain current is given by Figure 2.…”

Section: Proposed Bandgap Reference Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

Dai¹,

Li²,

An³

et al. 2018

dtetr

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show abstract

“…The voltages V PTAT and V CTAT are generally obtained by voltage drops of either forward‐biased PN junction diode, 11–13 base‐emitter junction voltages of the BJTs, 14–29 or gate‐to‐source voltages of subthreshold MOS transistors 30–43 . The first‐order temperature‐compensated voltage reference circuits have been reported in the literature, which are formed by using diodes, BJTs, MOS transistors, or by combination of these devices 11,12,14–17,26,28–41 . The voltage reference circuit presented by Banba et al 11 uses diodes, resistors, and operational amplifier.…”

Section: Introductionmentioning

confidence: 99%

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

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Summary A high‐order curvature‐compensated subthreshold voltage reference is proposed in this paper. The proposed curvature‐compensated voltage reference consists of two supply‐independent first‐order voltage references and a curvature compensation circuit. The supply‐independent first‐order voltage reference uses a negative feedback loop which improves the line sensitivity and eliminates the demand of operational amplifier, whereas the curvature compensation circuit provides high‐order temperature‐compensated output reference voltage. The proposed curvature‐compensated voltage reference provides an output reference voltage of 118.54 mV with a temperature coefficient of 21.5 ppm/°C over a wide temperature range of −60°C to 120°C. The power supply rejection ratio and line sensitivity are observed as −68.64 dB (for the frequency range of 1 Hz to 100 Hz) and 0.035%/V (for the supply voltage varies from 0.85 V to 2.5 V), respectively. The values of output noise at the frequencies of 1 kHz and 10 kHz without using any capacitive filter are obtained as 179.13 nV/ √ Hz and 123.87 nV/ √ Hz, respectively.

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“…These transistors composed three parts of the circuit: a self-cascode PTAT generator, a BJT bias circuit, and a VE divider. Mattia mentions more information in [5].…”

Section: Introductionmentioning

confidence: 99%

Low Power Voltage Reference Cells for Sensing Applications

Tucker¹

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Sub-1 V supply 5 nW 11 ppm/°C resistorless sub-bandgap voltage reference

Cited by 17 publications

References 13 publications

Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Low Power Voltage Reference Cells for Sensing Applications

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