Study the optical parameters of aluminum doped ZnS films deposited on soda-lime glass substrate

Eisa, M. H.; Abdulla, M. D.

doi:10.15251/cl.2022.199.591

Cited by 4 publications

(6 citation statements)

References 33 publications

(24 reference statements)

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“…However, when the films were grown using the PLD method, the deposition rate was calibrated, in order to regulate the thickness. The details concerning the set-up of the PLD method experiment have been provided elsewhere [14]. All samples were labeled as a control (ZnS/GSs or S0), the Al-doped ZnS/GSs (ZnS/ GSs: Al 4% or S1) and the (ZnS/GSs: Al 4% or S2), respectively.…”

Section: Sample Preparationmentioning

confidence: 99%

“…Furthermore, ZnS structures frequently crystallize in space groups (F43m) and (P63) in the cubic zincblende (ZB) phase at low temperatures, and (P63) in the hexagonal zincblende (ZB) phase at high temperatures [11]. Several research groups have attempted to dope ZnS films with elements such as In, Al, Fe, Co, Pb, Cd, Cu, Mn, Cr, Ni, Eu, Sm, and Cl throughout the growth process [14][15][16][17][18][19][20]. However, there have been infrequent studies on aluminum doped with ZnS films and placed on substrates [21,22].…”

Section: Introductionmentioning

confidence: 99%

“…However, aluminum doped ZnS films deposited on glass needs further investigation. Numerous deposition techniques, including sputtering, thermal evaporation, spray pyrolysis, chemical bath deposition, closespaced evaporation, electron beam evaporation and pulsed laser deposition have been used to prepare ZnS thin films [14,[23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

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The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

Ahmed¹

2022

JOJMS

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The pulsed-laser deposition (PLD) method was used to deposit undoped zinc sulphide (ZnS) and Al-doped zinc sulphide (AZS) films on glass substrates (GSs). The aluminum content in the ZnS films varied from 0% to 8%. The film morphology was studied using atomic force microscopy (AFM). The films were optically characterized using an Ultraviolet-Visible-near-infrared (UV-VIS-NIR) spectrophotometer with photon wavelengths ranging from 300 to 600nm. The average roughness (Sa), root-mean square (RMS) roughness (Sq), surface skewness (Ssk), and surface kurtosis (Suk) parameters of the samples were determined using the AFM method. The samples' AFM grain sizes were found to be 4.89 nm, 5.65 nm, and 12 nm, respectively. The doped ZnS thin film's surface roughness was found to be greater than the undoped ZnS thin film's. The samples showed a high transmittance across the whole visible spectrum, according to the UV data. The film optical refractive-index (n) and the extinction-coefficient (k) was computed using UV-VIS spectroscopy data. The techniques used in these investigations have been described and explained in detail. Good agreement was found when comparing results from this work against previously published data.

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Section: Sample Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

Ahmed¹

2022

JOJMS

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“…Ahmed and Eisa [19,20,21] fabricated thin lms in which the absorption coe cient is frequency dependent. This means that they can act as nano-inductors or nanoelectronics capacitors.…”

Section: Introductionmentioning

confidence: 99%

Use of Ultraviolet Spectrometer to Determine the Absorbance, Refractive Index, Electric Conductivity Permittivity beside Magnetic Permeability

Mahmoud,

Abdalgadir

2023

Preprint

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Solar cells are nowadays one of the most important issues that facing scientists. This is because they represent the best alternative that can replace petrol fuel. This encourages scientists to do intensive work to increase the efficiency of solar cells. Motivated by this urgent need for high-efficiency solar cells this work was done by preparing 5 samples of carbon doped with Aluminum oxide with different molar concentrations (0.1,0.3,0.5,0.7,0.9). The aim of this work is to characterize these samples to see how they can used as solar cells. The crystal and nanostructure have been characterized by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) techniques. The optical and electrical properties were characterized using an ultraviolet-visible spectrometer. The performance of a solar cell was tested using a simple electric circuit. The results of NixAL2(1-x)O4 samples indicate that the decreasing of Ni concentration (X) decreases the energy gap while the nanocrystal size, d-spacing, mass density, absorption coefficient, and solar cell efficiency increase. All the solar cell samples of this specimen exhibited a voltage of 1.184mV, an open-circuit voltage of 1.440mV, a fill factor of 0.73, and an efficiency range from 1.8642% up to 2.2460% according to the different concentrations.

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“…在可见光波长范围内具有高折射率和高透光率以及良好的化学和热稳定性，其原材料丰富且价格低廉 [10][11] 。因此，它也被广泛应用于红外激光器和场效应晶体管(FET) 、光催化剂、传感器等光电子领域 [12][13] 。近十年来，国内外针对 ZnS 研究进行了广泛的报道 [14][15][16] 。ZnS 薄膜是该化合物半导体材料研究和应用的重要方向之一，目前对于 ZnS 薄膜的制备方法主要有化学水浴沉积(CBD) [17 ] 、脉冲激光沉积(PLD) [18 ] 、电子束蒸发 [19 ] 、原子层沉积(ALD) [2 0 ] 和磁控溅射 [ 21 ] 。相较于其他的制备方法，磁控溅射镀膜具有膜附着力好、致密、成本低等优点。但在制备 ZnS 时，会存在不同程度的硫缺失，这会影响 ZnS 薄膜物理和化学性质。对此，P. K. Ghosh [22] 等人通过磁控溅射技术制备出 ZnS 纳米晶体薄膜，并研究薄膜光电性能和空位缺陷。Wang X [23]…”

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Effect of different sulfur pressure annealing on properties of sputtering-deposited ZnS thin films

Dang¹,

Zhang²,

Zhang³

et al. 2023

Acta Phys. Sin.

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As a kind of wide-band gap semiconductor, ZnS has attracted extensive attention in recent years due to its excellent photoelectric performance, which has broad application prospects in solar cells, photocatalysts and sensors. In this paper, ZnS thin films were first deposited by RF magnetron sputtering, and then annealed at 600℃ and different sulfur pressures. The crystal structure, surface morphology, grain size, composition, transmittance and defects of ZnS thin films were analyzed by XRD, XRD, SEM, EDS, UV-vis transmission spectra, positron annihilation Doppler broadening spectroscopy (DBS). The results show that the crystallinity of ZnS films can be improved by annealing in sulfur atmosphere, and the optical band gap of ZnS films after annealing is 3.43-3.58 eV. When the sulfur pressure is higher than 0.49atm, the sulfur interstitial atoms in the ZnS and the elemental sulfur on the surface reduce the transmittance of the film in the visible region. The DBS results also showed that the defect concentration of ZnS films decreased gradually from the surface layer to the inner layer, and the defect of ZnS films decreased with the increase of sulfur pressure. At the same time, the 3γ annihilation also proves that the interior of the film was relatively dense, and the open porosity of the film will increase due to vulcanization. Adsorbed sulfur occupies the position of sulfur vacancy defect in the crystal through internal diffusion, which leads to the decrease of defect concentration and the improvement of film quality.

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Study the optical parameters of aluminum doped ZnS films deposited on soda-lime glass substrate

Cited by 4 publications

References 33 publications

The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

Use of Ultraviolet Spectrometer to Determine the Absorbance, Refractive Index, Electric Conductivity Permittivity beside Magnetic Permeability

Effect of different sulfur pressure annealing on properties of sputtering-deposited ZnS thin films

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