The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

Abstract

The pulsed-laser deposition (PLD) method was used to deposit undoped zinc sulphide (ZnS) and Al-doped zinc sulphide (AZS) films on glass substrates (GSs). The aluminum content in the ZnS films varied from 0% to 8%. The film morphology was studied using atomic force microscopy (AFM). The films were optically characterized using an Ultraviolet-Visible-near-infrared (UV-VIS-NIR) spectrophotometer with photon wavelengths ranging from 300 to 600nm. The average roughness (Sa), root-mean square (RMS) roughness (Sq), surface skewness (Ssk), and surface kurtosis (Suk) parameters of the samples were determined using the AFM method. The samples' AFM grain sizes were found to be 4.89 nm, 5.65 nm, and 12 nm, respectively. The doped ZnS thin film's surface roughness was found to be greater than the undoped ZnS thin film's. The samples showed a high transmittance across the whole visible spectrum, according to the UV data. The film optical refractive-index (n) and the extinction-coefficient (k) was computed using UV-VIS spectroscopy data. The techniques used in these investigations have been described and explained in detail. Good agreement was found when comparing results from this work against previously published data.

Use of Ultraviolet Spectrometer to Determine the Absorbance, Refractive Index, Electric Conductivity Permittivity beside Magnetic Permeability

“…Mashair [18] used Maxwell's equations to prove theoretically the expression of frequency-dependent absorption coe cient. In Ahmed and Eisa [19,20,21] thin lms the absorption coe cient is frequency dependent. The study of Gregory and Louise [22,23] on some materials showed that the absorption coe cient decreased upon increasing the frequency.…”

“…Ahmed and Eisa [19,20,21] fabricated thin lms in which the absorption coe cient is frequency dependent. This means that they can act as nano-inductors or nanoelectronics capacitors.…”