Study on the Hall-effect and photoluminescence of N-doped p-type ZnO thin films

Zeng, Yu‐Jia; Ye, Z.Z.; Xu, Weizhong; Liu, B.; Che, Yong; Zhu, Liping; Zhao, Binghui

doi:10.1016/j.matlet.2006.04.001

Cited by 74 publications

(42 citation statements)

References 17 publications

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“…The PL peak at 486 and 411 nm for as grown films at sputtering power of 60 and 80 W, respectively, are related to a band to acceptor re-emission. The N acceptor energy, E A can be estimated according to the following equation 40 :…”

Section: Wavenumber (Nm)mentioning

confidence: 99%

Ti substituted nano-crystalline Cu3N thin films

et al. 2010

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Ti:Cu 3 N thin films were deposited on Si(111), quartz, and glass slide substrates by DC magnetron sputtering in molecular nitrogen ambient. The structural properties of Ti:Cu 3 N thin films were studied by X-ray diffraction (XRD) analysis. XRD measurements show diffraction band with peaks close to the (100) and (200) diffraction lines of cubic antiReO 3 structure of Cu 3 N. The Ti:Cu 3 N nano-crystalline size is in the range 22-27 nm. Lattice constant expansion reflects Ti incorporation causing the excess nitrogen to occur. Surface morphology shows that the N richness suppresses the grain growth. The optical absorption spectra indicate a remarkable shift to higher energies of the absorption edge due to higher N concentration and quantum size effect. Photoluminescence (PL) measurement shows interstitial N excess and Ti impurity produce shallow and deep levels, respectively. Thermal stability of the Ti:Cu 3 N films annealed at 300 and 400°C is improved in comparison with that of Ti free Cu 3 N films.

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Section: Wavenumber (Nm)mentioning

confidence: 99%

Ti substituted nano-crystalline Cu3N thin films

et al. 2010

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“…ZnO thin films were usually prepared by methods such as sputtering, metal chemical vapor deposition [11], spray pyrolysis [12], electrodeposition [13], pulsed laser deposition [14], and sol-gel process [15,16]. Among all of these techniques, the sol-gel process is particularly attractive due to its simplicity, cheapness, large area coating, and uniformity of thickness.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

Zhang

Wang

et al. 2010

Ionics

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In this work, ZnO thin films were synthesized by sol-gel method on glass substrates followed by calcinations on different temperatures. The effect of annealing temperature on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffraction and atomic force microscope. The optical properties were studied by a UV-visible spectrophotometer. The results show that all the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure. With the increasing annealing temperature (mse.ufl.edu), the intensity of (002) peak, particle size, surface RMS roughness, and absorbance of the ZnO thin films were increased as well. On the contrary, the transmittance and optical band gaps were decreased.

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“…The film exhibited (002) preferential orientation under other substrate temperatures. The strongest intensity of (002) diffraction was obtained under 600℃ with lower intensity of Peak P, which might be related to the n-type conduction of the films, because the intensity of Peak P is probably associated with electron transition from N shallow acceptor levels to the conduct band [18] .…”

Section: Electrical Propertiesmentioning

confidence: 95%