Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Zhu, Tian; Zheng, Xuefeng; Cao, Yanrong; Wang, Chong; Mao, Wei; Wang, Yingzhe; Mi, Min-Han; Wu, Mei; Mo, Jianchu; Ma, Xiaohua

doi:10.1088/1361-6641/ab7773

Cited by 11 publications

(4 citation statements)

References 39 publications

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“…The impact of capping double-channel HEMTs was also evaluated with thermo-electrical simulations [157]. The authors observed that the PCD layer provides a lateral heat conduction path close to the hot spot located at near the drain side of the gate edge, modulating the channel lattice temperature distribution and making it become more uniform.…”

Section: Capping Diamondmentioning

confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.

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Section: Capping Diamondmentioning

confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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“…Semiconductor devices will generate heat during normal operation, especially HEMTs composed of third-generation wide-gap semiconductor material with the high output power density and high-frequency characteristics. The increase in temperature will cause performance degradation and even unrecoverable damage to the device [8,19,36], which contributes to an obvious gap between actual performance and theoretical performance of HEMTs. Therefore, in order to improve the working efficiency of HEMTs, the temperature rise phenomenon needs to be studied emphatically.…”

Section: Thermal Characteristicsmentioning

confidence: 99%

“…A. Jarndal et al developed a large-signal model of GaN HMET, which takes into account the performance degradation caused by temperature rise and can accurately predict self-heating-induced current dispersion [18]. T. Zhu et al plated a diamond layer above the passivation layer for GaN HEMT, which can improve heat dissipation [19]. Due to its military value, the study of HPM effects has also become a hot spot in recent decades.…”

Section: Introductionmentioning

confidence: 99%

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Qin

Chai

et al. 2022

Micromachines

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The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

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“…[12] The implementation of DC-GaN-HEMTs substantially obtains higher power gain capability and cutoff frequency than SC devices, which are of great significances in terms of RF circuit designs. [13,14] Furthermore, DC-GaN-HEMTs are potential devices for radiation sensors due to an improvement of the heavy ion sensitivity and the proper switching ability by introducing a dual gate. [15] Enhancement-mode DC-GaN-HEMTs by the fully recessed gate at the barrier layer complemented with the superior mobility have also attracted much attention, and the parasitic channel exhibits high mobilities since the spatial separation from the etched interface.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

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Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Cited by 11 publications

References 39 publications

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

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Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Cited by 11 publications

References 39 publications

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors