Diamond/GaN HEMTs: Where from and Where to?

Mendes, Joana Catarina; Liehr, M.; Li, Changhui

doi:10.3390/ma15020415

Cited by 27 publications

(8 citation statements)

References 170 publications

(250 reference statements)

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“…Many methods have been suggested, for example, developing diamond films to cover passivated GaN equipment, or diamond/GaN wafers for new generation equipment research and development. The prospect and difficult problem of science and technology of each method are reviewed by Mendes et al, and their advantages and disadvantages are introduced and discussed in detail [ 26 ].…”

Section: Diamond/gan Hemtsmentioning

confidence: 99%

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Sang

Wang

et al. 2023

Molecules

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

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Section: Diamond/gan Hemtsmentioning

confidence: 99%

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Sang

Wang

et al. 2023

Molecules

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“…GaN and diamond are both wide band gap semiconductors with band gap values of 3.44 eV and 5.45 eV, respectively [10][11][12][13][14][15][16][17][18][19]. On the other hand, silicon has an intrinsic band gap of 1.12 eV with electron and hole mobilities of 1400 and 450 cm 2 /Vs, respectively.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Etching of GaN with N2 Gas Addition during CVD Diamond Growth

Mallik,

Krishnamurthy,

Shih

et al. 2024

Preprint

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In the present work, diamond films have been grown on GaN-on-Sapphire substrates by chemical vapor deposition (CVD) with the addition of nitrogen to the standard H2/CH4 precursor recipe. Diamond on GaN materials processing is not straight-forward, as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%, 3% and 5% N2 gas was gradually added to the H2 gas with fixed 6% CH4 in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures were produced, with addition of nitrogen to the precursor gas recipe. Nitrogen gas changes the diamond film microstructure from faceted to spherical grains, with signs of GaN etching. The sp3 bonded diamond film produced by nitrogen addition was found to be co-deposited along with a considerable amount of other non-diamond carbon phases (D - disordered graphite, G - crystalline graphite, TPA - trans-polyacetylene) and qualitatively all the diamond films were 50% pure (Raman peak ratio Isp3 / ID). The FWHM of the sp3 carbon Raman peak was calculated to be 6.5 cm-1, when there was no nitrogen gas in the precursor recipe, which deteriorates to a large extent after successive addition of N2. Fourier transform infrared spectroscopy (FTIR) showed a strong presence of the nitrogen related defects (peak positions at 1190 and 1299 cm-1) inside the nanocrystalline diamond (NCD) films grown with N2 addition. GaN layer etching from the base substrate by the CVD plasma was clearly evidenced by energy dispersive X-ray spectra (EDS) of the deposited films. Al elemental EDS peaks from the base sapphire substrate were observed for the films grown with nitrogen addition, but no Ga EDS peaks were detected. X-ray diffraction (XRD) micrographs further supported the enhanced GaN etching phenomenon. Nitrogen addition was thus found to be detrimental for growing CVD diamond films over GaN surfaces. The electrical resistivity of the uncoated GaN was initially measured to be 22.2 Ω-cm. However, the resistivity rose to 1.59×106 Ω-cm after the nitrogen assisted film deposition; due to the GaN etching - thereby exposing the underlying insulating sapphire substrate.

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“…In spite of great progress, GaN and AlN wafers are still too expensive and limited in size; sapphire is cheaper but has a low thermal conductivity. Synthetic diamond, with its outstanding thermal conductivity and breakdown field, could be the best choice for high-power devices, but such wafers are limited in size as well, and fostering epitaxial growth on them is very challenging [ 8 , 9 ]. SiC and silicon are the remaining substrate options.…”

Section: Introductionmentioning

confidence: 99%

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

et al. 2023

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A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

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Diamond/GaN HEMTs: Where from and Where to?

Cited by 27 publications

References 170 publications

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Enhanced Etching of GaN with N2 Gas Addition during CVD Diamond Growth

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

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