Study on Schottky Al
 x
 Ga1-x
 N/GaN IMPATT Diodes for Millimeter-Wave Application

Dai, Yang; Dang, Jiangtao; Lei, Xuegong; Zhang, Yunyao; Yan, Junfeng; Zhao, Wenguang; Liu, Chen; Zhao, Shenglei

doi:10.1109/ted.2022.3192331

Cited by 4 publications

(1 citation statement)

References 24 publications

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“…In addition, significant progress has been made in the study of heterojunction-structured IMPATTs. [16][17][18][19] Due to the spontaneous polarization and piezoelectric polarization effects, AlGaN/GaN heterojunctions can induce a high density of two-dimensional electron gas (2-DEG) at the interface with high electron mobility. The electron saturation drift velocity of AlGaN/ GaN 2-DEG is better than that of bulk GaN.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Dai,

Li,

Gao

et al. 2024

Journal of Applied Physics

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A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT is compatible with the available GaN high electron mobility transistor (HEMT) manufacturing process and has a shorter actual electron transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared with the same-sized HIMPATT, the optimum frequency of BIMPATT rises from 320 to 420 GHz and possesses a far wider operating frequency band, especially in the near 0.9 THz range. The maximum DC-RF conversion efficiency rises from 12.9% to 17.6%. The maximum RF power of BIMPATT is 3.18 W/mm, which is similar to 3.12 W/mm of the HIMPATT. Furthermore, our simulation demonstrated that the characteristics of BIMPATT are significantly affected by the length of anode and the thickness of the AlGaN barrier layer. The effects of ohmic contact resistance and background impurities on BIMPATT are also taken into account. This paper provides a reference for the design and characteristics enhancement of the lateral IMPATT devices.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Dai,

Li,

Gao

et al. 2024

Journal of Applied Physics

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Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source

Chatterjee

Mukherjee²

2022

J. Electron. Mater.

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Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

Kawasaki

Kumabe

Ando

et al. 2023

IEEE Electron Device Lett.

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Study on Schottky Al_xGa_1-xN/GaN IMPATT Diodes for Millimeter-Wave Application

Cited by 4 publications

References 24 publications

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

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Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application

Cited by 4 publications

References 24 publications

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

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Study on Schottky Al_xGa_1-xN/GaN IMPATT Diodes for Millimeter-Wave Application