AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application
Yang Dai,
Yukun Li,
Leiyu Gao
et al.
Abstract:A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT is compatible with the available GaN high electron mobility transistor (HEMT) manufacturing process and has a shorter actual electron transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared with the same-sized HIMPATT, the optimum frequency of BIMPATT rises from 320 to 420 GHz and possesses a far wider operating frequency band, es… Show more
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