Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

Kawasaki, Seiya; Kumabe, Takeru; Ando, Yoshinobu; Deki, Manato; Watanabe, Hirotaka; Tanaka, Atsushi; Honda, Yoshio; Arai, M.; Amano, Hiroshi

doi:10.1109/led.2023.3285938

Cited by 6 publications

(4 citation statements)

References 34 publications

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“…Due to the challenges in fabricating and characterizing THz IMPATT oscillators based on the AlGaN/GaN material system discussed in this paper, experimental reports on these THz sources are currently unavailable in the published literature. While some researchers have recently attempted to experimentally realize SDR IMPATT sources based on GaN at lower microwave frequencies [70][71][72], the more thorough investigations presented in this paper offer significant potential for the realization of THz AlGaN/GaN/AlGaN MQW IMPATT sources in the near future.…”

Section: Comparison With Other Thz Sourcesmentioning

confidence: 95%

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Ghosh,

Deb,

Acharyya

et al. 2024

Nanomaterials

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In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications.

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Section: Comparison With Other Thz Sourcesmentioning

confidence: 95%

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Ghosh,

Deb,

Acharyya

et al. 2024

Nanomaterials

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“…The device showed a maximum oscillation frequency of 9.5 GHz at a current density of 2.2 kA cm −2 , offering a peak output power of 14.45 mW. More recently, by decreasing the junction diameter and capacitance, more than 30 dBm output power was achieved up to 21 GHz by Kawasaki et al [182]. Further reduction of the series resistance and higher biasing current are expected to improve the device performance at higher frequencies.…”

Section: Impact Ionization Avalanche Time Transit Diodes (Impatts)mentioning

confidence: 95%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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“…The shorter the electron transit distance, the higher the frequency, whereas the wider the junction area between the anode and AlGaN, the lower the frequency. 13 However, the effect of shortened electron transit distance is significant when L s is over 120 nm, leading to a rapid frequency enhancement. Moreover, with increasing L s , the maximum RF power reaches the maximum when L s is 100 nm, then begins to fall.…”

Section: Rf Power and Efficiency Analysis Of Different Bimpatt Diodesmentioning

confidence: 99%

“…The experimental GaN vertical IMPATT diodes have frequencies of about 0.8-38 GHz. [11][12][13][14][15] Among them, Bian et al 14 demonstrated an experiment of GaN IMPATT oscillator operated at Ka-band for the first time, which is the highest operating frequency of 38 GHz with a power of 7 dBm. At the same time, Kawasaki et al 15 demonstrated a GaN Hi-Lo IMPATT diode with a maximum peak output power of 25.5 W at 15 GHz.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Dai,

Li,

Gao

et al. 2024

Journal of Applied Physics

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A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT is compatible with the available GaN high electron mobility transistor (HEMT) manufacturing process and has a shorter actual electron transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared with the same-sized HIMPATT, the optimum frequency of BIMPATT rises from 320 to 420 GHz and possesses a far wider operating frequency band, especially in the near 0.9 THz range. The maximum DC-RF conversion efficiency rises from 12.9% to 17.6%. The maximum RF power of BIMPATT is 3.18 W/mm, which is similar to 3.12 W/mm of the HIMPATT. Furthermore, our simulation demonstrated that the characteristics of BIMPATT are significantly affected by the length of anode and the thickness of the AlGaN barrier layer. The effects of ohmic contact resistance and background impurities on BIMPATT are also taken into account. This paper provides a reference for the design and characteristics enhancement of the lateral IMPATT devices.

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Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

Cited by 6 publications

References 34 publications

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

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