Study on precision dicing process of SiC wafer with diamond dicing blades

Abstract

An innovative method for high-speed micro-dicing of SiC has been proposed using two types of diamond dicing blades, a resin-bonded dicing blade and a metal-bonded dicing blade. The experimental research investigated the radial wear of the dicing blade, the maximum spindle current, the surface morphology of the SiC die, the number of chips longer than 10 µm, and the chipped area, which depend on the dicing process parameters such as spindle speed, feed speed, and cutting depth. The chipping fractures in the SiC had obvious brittle fracture characteristics. The performance of the metal-bonded dicing blade was inferior to that of the resin-bonded dicing blade. The cutting depth has the greatest influence on the radial wear of the dicing blade, the maximum spindle current, and the damage to the SiC wafer. The next most important parameter is the feed speed. The parameter with the least influence is the spindle speed. The main factor affecting the dicing quality is blade vibration caused by spindle vibration. The optimal SiC dicing was for a resin-bonded dicing blade with a spindle speed of 20 000 rpm, a feed speed of 4 mm/s, and a cutting depth of 0.1 mm. To improve dicing quality and tool performance, spindle vibrations should be reduced. This approach may enable high-speed dicing of SiC wafers with less dicing damage.

Design method for wafer dicing machine base based on calculations

“…It involves setting controllable parameters and examining if they meet various constraints. By defining machine design specifications, such as processing range and accuracy errors, based on the research in [7], [8] and general wafer dicing machine specifications, we can understand the motion characteristics of the Z-axis cutting axis and X, Y-axis feed axes in typical wafer dicing machines. This allows us to approximately select appropriate motion system components for the feed axes, such as servo motors, ball screw drives, and sliders.…”

“…The Y-beam is a cantilever beam, and the maximum deflection occurs at the free end point C. The required sectional moment of inertia for the desired accuracy can be calculated. Equations (7) states that the sectional moment of inertia for the Y-beam must be greater than 7,120 cm 4 . For a section with a width of 28 cm, the required height is calculated to be 14.5 cm, which is greater than 12 cm.…”

A 2D Ultrasound Phased-Array Transmitter ASIC for High-Frequency US Stimulation and Powering

“…For kerf sizes of 40 μm or larger, G starts to drop for frequencies above 8 MHz. Thus, for high frequencies, it is recommended to minimize k as much as the microfabrication processes allow [27], ideally to values much lower than d. Furthermore, V ol res decreases with increasing the frequency; however, that increase was less significant for frequencies above 12 MHz. Increasing the frequency further would then limit the available area for the beamforming circuitry without significantly improving performance.…”

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

“…Currently, the most common method for cutting SiC is diamond blade or wire saw cutting [6]. However, this method has low cutting efficiency, high cutting loss, and often results in chipping and unevenness of the cut edges [7]. To solve the cutting problem of SiC, the world's leading semiconductor companies and research institutions [8][9][10] are actively pursuing the development of laser processing technology to replace mechanical cutting.…”