Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser
Pei Chen,
Shaowei Li,
Rui Pan
et al.
Abstract:The existing mechanical dicing process of single crystalline Silicon Carbide (SiC) is one of the main factors limiting the development of semiconductor process, which could be replaced by laser dicing potentially. However, the zones of ablation damage generated by high power laser should be well controlled. When wafer is only scribed with a thin groove by laser, thermal effect could be reduced significantly. The while scribing process includes laser grooving and subsequent mechanical cracking. The mechanical c… Show more
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