Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

Wu, Changyan; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Yi

doi:10.1016/j.sse.2015.03.011

Cited by 9 publications

(6 citation statements)

References 34 publications

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“…Coulomb scattering is the dominant carrier scattering mechanism in a-IGZO, which is weakened at a higher gate voltage because of the higher carrier concentration and the enhanced screening effect. 39 In other words, the higher V gs can shield the scattering behavior activated by the higher V ds , and thus this phenomenon disappears in region IV. Therefore, the interfacial traps exist at any V ds and V gs values within the measured range, leading to an overall lower current in the device in Figure 4a compared to that in Figure 4b.…”

Section: Results and Disccusionmentioning

confidence: 96%

“…It is commonly accepted that carrier transportation in the TFTs is limited by Coulomb scattering, phonon scattering, and surface roughness scattering. Coulomb scattering is the dominant carrier scattering mechanism in a-IGZO, which is weakened at a higher gate voltage because of the higher carrier concentration and the enhanced screening effect . In other words, the higher V gs can shield the scattering behavior activated by the higher V ds , and thus this phenomenon disappears in region IV.…”

Section: Results and Disccusionmentioning

confidence: 99%

“…The results can also be confirmed by the capacitance–frequency characterizations. More charged defects (oxygen vacancies) in the as-fabricated Al 2 O 3 make the ion polarization drop to the electron polarization under MHz order of magnitude Figure b shows the relationship between frequency and capacitance.…”

Section: Results and Disccusionmentioning

confidence: 99%

“…More charged defects (oxygen vacancies) in the as-fabricated Al 2 O 3 make the ion polarization drop to the electron polarization under MHz order of magnitude. 39 S1 in the Supporting Information. This demonstrates that the proposed flexible device exhibits an excellent performance with a higher mobility, a lower SS, a larger on/off current ratio, and the lowest V th among the state-of-the-art works on flexible a-IGZO TFTs with a low thermal budget.…”

Section: Results and Disccusionmentioning

confidence: 99%

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Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment

Zhang

Huang

Chang

et al. 2021

ACS Appl. Mater. Interfaces

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For high-performance and high-lifetime flexible and wearable electronic applications, a low-temperature posttreatment method is highly expected to enhance the device performance and repair the defects induced by the low-temperature fabrication process intrinsically. Particularly, if the method can repair the traces induced by the multiple cycles of bending or deforming, it would overcome current fatal obstacles and provide a vital solution to the rapid development of flexible electronics. In this work, we propose a method to apply low-temperature supercritical CO2 fluid with a dehydration function to improve or even restore the performance of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). After the treatment, the a-IGZO TFT exhibits 3 times improvement drivability up to 0.24 μA/μm, a smaller subthreshold swing of 0.18 V dec–1, a smaller V th of 0.25 V, and a larger I on/I off ratio of 3.8 × 107. Additionally, the posttreated a-IGZO TFTs possess relatively good uniformity and reproducibility with an on-current standard deviation of 0.047 μA/μm, and the performance of the a-IGZO TFT after the treatment remains almost unchanged even after bending 2500 times at a bending radius of 5 mm. These characteristics are attributed to the improved quality of the channel and gate dielectric. It is worth noting that when this is applied to a flexible TFT-driven organic light-emitting diode lighting system, this treatment method can restore the performance of not only the TFT but also the lighting system, even after the system has been bent more than 600 times and has failed. To date, this is the first time that the bending-track erasing function of the supercritical fluid for flexible systems has been reported, which has the potential to prolong the lifetime of flexible electronics.

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Section: Results and Disccusionmentioning

confidence: 96%

Section: Results and Disccusionmentioning

confidence: 99%

Section: Results and Disccusionmentioning

confidence: 99%

Section: Results and Disccusionmentioning

confidence: 99%

See 2 more Smart Citations

Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment

Zhang

Huang

Chang

et al. 2021

ACS Appl. Mater. Interfaces

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“…Mobility is a key quantity in electronic transport that provides an understanding of the physical processes affecting the motion of free carriers [1][2][3][4]. Comparative analysis of mobility as a key figure of merit of heterosystems is of great importance in synthesizing novel materials, developing novel thin-film technologies, interface modification, controlling fabrication of films and devices on their base [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Conditions for the identical distribution of free carriers in thin films

Zaytseva¹,

Naumova²,

Гутаковский³

2021

J. Phys. D: Appl. Phys.

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The condition of the same distribution of free carriers in thin films is necessary for comparing the mobility and analyzing the scattering mechanisms of carriers near semiconductor film/insulator interfaces. In thin film/insulator systems with different design parameters, it is difficult to ensure the same distribution of free carriers due to physical phenomenon such as the coupling effect. In this study, TCAD simulations of thin-film transistors, which have been used to monitor Si film properties, were applied to find parameters that allow tuning the potential distribution and, accordingly, the distribution of free carriers in films. It was found that such parameters are the film regime, the density of induced carriers, the gate voltage or threshold voltage of transistors. The conditions for the selection of parameters were found that ensure the same distribution of free carriers in thin-film structures for the cases of different thicknesses of films and the surrounding dielectrics. It was shown that the proposed approach can be used for a comparative analysis of the mobility in thin films and makes it possible to eliminate errors associated with different distributions of carriers in the films due to the coupling effect.

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