Study on effect of quantum well number on performance characteristics of GaN-based vertical cavity surface emitting laser

Goharrizi, A. Zandi; Alahyarizadeh, Gh.; Hassan, Z.; Hassan, H. Abu

doi:10.1016/j.physe.2013.02.019

Cited by 4 publications

(1 citation statement)

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“…The number of wells/barriers in the MQW structures is one of the critical factors that can influence the overall performance of the device [30][31][32][33]. There are no specific numbers for the wells/barriers that represent an optimized state, as they can vary across different materials and depend on manufacturing conditions.…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers

Zeinalvand Farzin,

Seyedein Ardebili,

Kang

et al. 2024

Photonics

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InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two InAsPSb/InGaAs multi-quantum well light-emitting diodes with 6 and 15 quantum well periods. The photoreflectance of the samples was analyzed at various temperatures and excitation powers. By examining the Franz-Keldysh oscillations in the spectra, we explored the influence of the number of well layers on the electric field strength in the junction. The results showed that the number of quantum wells can influence the electric field at the junction, potentially impacting the overall performance of the devices. The simulation of the electric field strength aligns with the results of the photoreflectance analysis. This suggests that the field extracted from Franz-Keldysh oscillations characterizes the field inside the multi-quantum wells, offering potential reasons for the observed effects on the number of multi-quantum wells in the field.

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Section: Introductionmentioning

confidence: 99%