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A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO 4•-) oxidizer and Fe 2+ activator in slurry is presented. The results indicate that complexing agent with Fe 2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.

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