Study on deposition kinetics of high-K materials by X-ray fluorescence techniques

Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

“…The two different process conditions of the HfO 2 -Al 2 O 3 are evident from the different slopes of the lines. A recent report also studied HfO 2 -Al 2 O 3 mixtures, as well as Al 2 O 3 and HfO 2 separately, using TXRF and XRF [9]; similar trends to this study were seen. Table 1 shows the capability of TXRF to monitor the deposition uniformity of these films.…”

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

“…Whereas before only Si and SiO 2 wafers were measured, now a whole range of materials as wafers or layers have been reported in research and development applications: silicon nitride [102,103], siliconon-insulator (SOI) [104], Ge [105,106], GaAs [107,108], HfO 2 [109][110][111], Al 2 O 3 [110,111], Ta 2 O 5 [112], polymer layers [113] and other unpublished materials. Both procedures for Direct-TXRF and VPD-DC-TXRF have been reported.…”

“…A first characteristic of interest for layered materials is in the coverage of the material constituent on the bulk substrate. TXRF has been applied to characterize deposition processes of for example gate dielectrics [109][110][111]114], with a clear advantage of accessibility, user friendliness and related learning speed compared to established techniques such as Rutherford backscattering spectrometry (RBS). Fig.…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…In one by Carpanese et al the deposition kinetics of hafnium oxide and aluminium oxide on different pre-treated substrates was studied. 134 The two materials being deposited were high k-materials that may, in the future, be used in micro-electronic devices. Both XRF and TXRF were used for the determinations and, as well as giving information on the initial growing cycles of deposition, they were also capable of indicating the extent of C and Cl inclusion in the film.…”