Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications

Do, Kyoung-Il; Lee, Byung-Seok; Koo, Yong-Seo

doi:10.1109/led.2018.2885846

Cited by 25 publications

(12 citation statements)

References 13 publications

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“…Consequently, several engineers select the SCR and LIGBT as high-voltage ESD protection devices, and various studies have been conducted to optimize their electrical characteristics [15]- [17]. However, because the critical electric field (E C ) is significantly high compared to the forward voltage drop in 4H-SiC, a strong snapback phenomenon occurs [18], [19]. In this snapback phenomenon, the difference between the trigger and holding voltages becomes larger than when silicon is used for fabrication.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Jin

Lee

et al. 2021

IEEE J. Electron Devices Soc.

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4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide range of snapback phenomena is triggered for 4H-SiC-based ESD protection devices owing to a high critical electric field. In this study, an ESD protection device based on a lateral insulated-gate bipolar transistor (LIGBT) with a new structure that creates an internal silicon-controlled rectifier (SCR) path is proposed. The proposed ESD protection device minimizes the effective base region of the NPN parasitic bipolar transistor to the gate length based on the internal SCR operation of the LIGBT. It also adjusts the emitter injection efficiency of the PNP parasitic bipolar transistor by introducing a segment topology and inserting an additional implant area. Consequently, the proposed ESD protection device significantly improves the wide range of snapback phenomena occurring in the 4H-SiC materials. A conventional SCR, the LIGBT, and the proposed protection device were fabricated using the 4H-SiC process under the same condition, and their electrical characteristics were comparatively analyzed using a transmission-line pulse system. Moreover, its high-temperature reliability was evaluated at 300-500 K to examine the compatibility with 4H-SiC devices and circuits that require a relatively high-temperature operation.INDEX TERMS Electrostatic discharge, holding voltage, snapback, silicon-controlled rectifier, lateral insulated-gate bipolar transistor.

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Section: Introductionmentioning

confidence: 99%

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Jin

Lee

et al. 2021

IEEE J. Electron Devices Soc.

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“…With the miniaturization of semiconductor feature size and the advancement of integrated circuits, catastrophic ElectroStatic Discharge (ESD) events can seriously deteriorate chip reliability [1][2][3][4][5][6]. Conventional diode structures and Gate-Grounded NMOS (GGNMOS) structures always require a large silicon area to achieve a good ESD robustness [7][8][9][10]. By contrast, silicon controlled rectifiers (SCRs) have been widely used due to their highest robustness per unit area [11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Analysis of current aggregation in gate-control dual direction silicon controlled rectifier

Zhong

Wang

Jin

et al. 2021

IEICE Electron. Express

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The current aggregation mechanism created by the gate structure is proposed for electrostatic discharging (ESD). Through device simulation, the size-expanded gate structure in gate-control dual-direction silicon controlled rectifier (GC-DDSCR) is found to aggregate the surface parasitic current path and the main SCR current path. The SCR current path is consequently twisted and extended to increase the holding voltage (Vh). Two GC-DDSCRs are fabricated in a 0.5μm CMOS technology and tested by transmission line pulse (TLP). The Vh increases from 13.84V to 16.44V as the gate size expands from 2.5μm to 4.5μm. The mechanism of current aggregation is verified.

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“…By providing an additional ESD discharge path, the recently proposed low-dynamic -resistance-dual SCR (LDRDSCR) [5] has an excellent dynamic resistance. However, its low holding voltage falls outside the high-voltage ESD design window, and the device structure must be lengthened, increasing its on-resistance [8][9][10]. Fig.…”

Section: Introductionmentioning

confidence: 99%

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

Koo

2020

IEEE J. Electron Devices Soc.

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The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge path. In addition, the low holding voltage of existing DDSCRs is not suitable for high-voltage applications. In this study, a novel DDSCR with a high holding voltage and low dynamic resistance is proposed and its electrical characteristics are verified. The proposed DDSCR has two additional internal parasitic bipolar transistors compared to a conventional lowtriggering voltage DDSCR (LTDDSCR). Self-gate biasing reduces latch-mode feedback between the parasitic bipolar transistors in the SCR. The device is fabricated using 0.13 um BCD processes and implements a segment layout resulting in a very low dynamic resistance of 2.2 Ω and excellent holding voltages of up to 17.2 V. The proposed DDSCR demonstrates improved reliability and area efficiency for 12 V applications.

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Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications

Cited by 25 publications

References 13 publications

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Analysis of current aggregation in gate-control dual direction silicon controlled rectifier

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

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