Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering

Granada-Ramírez, D.A.; Pulzara-Mora, A.; Pulzara-Mora, C.; Pardo-Sierra, A.; Cardona-Bedoya, Jairo; Pérez-González, M.; Tomás, S.A.; Gallardo-Hernández, S.; Mendoza-Álvarez, J. G.

doi:10.1016/j.apsusc.2022.152795

Cited by 8 publications

(2 citation statements)

References 39 publications

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“…The binding energy of In 4d and Ga–N of InGaN NR/PEDOT:PSS heterojunction becomes higher (blue shift), corresponding to 19.07 and 19.82 eV, respectively. For N 1s spectra of InGaN NRs, the binding energy peak can be divided into four peaks (Ga LM, In–N, Ga–N, and N–C), located in 392.04, 395.01, 396.78, and 399.9 eV, respectively . However, the auger peak (Ga LM) will disappear in the InGaN NR/PEDOT:PSS heterojunction.…”

Section: Resultsmentioning

confidence: 99%

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Chen,

Xie,

Lan

et al. 2024

ACS Appl. Mater. Interfaces

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InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 μs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.

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Section: Resultsmentioning

confidence: 99%

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Chen,

Xie,

Lan

et al. 2024

ACS Appl. Mater. Interfaces

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“…), and one or more group V elements (nitrogen, phosphorus, arsenic, antimony, etc.). They are mostly employed in microelectronics for integrated circuits, in photovoltaic cells and optoelectronic devices such as light-emitting diodes (LEDs) [3][4][5][6][7][8][9][10][11]. III-V semiconductor materials are of most interest because of their characteristics, they are durable and resistant, they have high thermal conductivity and a direct band gap, etc.…”

Section: Introductionmentioning

confidence: 99%

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

Mostefai¹

2022

J. Nano- Electron. Phys.

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Semiconductor materials are categorized by their chemical composition. There are some basic semiconductors, for example silicon (Si) and germanium (Ge), which are part of group IV elements. There are compound semiconductors, binary, ternary and quaternary, and the most common are III-V semiconductors. One of them is a quaternary semiconductor compound GaxIn1 -xAsySb1 -y (Gallium Indium Arsenide Antimonide) composed of group III elements, for example, gallium (Ga) and indium (In), and group V elements, for example, arsenide (As) and antimonide (Sb). Semiconductors constituted of III-V compounds have great potential for technological applications. They are used in advanced optoelectronic devices, microelectronics and photovoltaic cells due to their properties (robust, high thermal conductivity, direct band gap, etc.). They have been extensively studied over the past decades due to the high quality of these materials and their exceptional optical and electronic characteristics. This work describes the energy gap Eg as a function of x at T = 300 K, effective density of states (Nc and Nv) in the conduction and valence bands, intrinsic carrier concentration ni as a function of temperature T for GaxIn1 -xAsySb1 -y semiconductors (compositions lattice-matched to GaSb and InAs), and temperature dependence of the energy band gap Eg for GaSb and InAs using MATLAB.

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Recent progress of indium-bearing group-III nitrides and devices: a review

He,

Li,

Xiao

et al. 2024

Opt Quant Electron

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Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering

Cited by 8 publications

References 39 publications

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

Recent progress of indium-bearing group-III nitrides and devices: a review

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