Study of the superconducting MgB2 films by ion beam analysis methods

Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate

“…4,5 The Si substrates which are the most attractive substrates for the applications of the MgB 2 films offer an MgB 2 film with zero resistance critical temperature below T C0 ≈ 27 K. 1,3,4 We have observed an interaction of the Si substrate with the MgB 2 in the form of the Mg 2 Si. 6 This letter presents a process of the MgB 2 superconducting film preparation which avoids the most of the obstacles mentioned above. First, the Si(100) substrate was covered by a 0.1 µm thick NbN buffer layer grown by reactive magnetron sputtering in a mixture of N and Ar at room temperature to limit the interdiffusion between the substrate and the MgB 2 film.…”

Vapor annealing synthesis of non-epitaxial MgB2films on glassy carbon

“…Molecular beam epitaxy [15,16], reactive evaporation [17], and hybrid physical-chemical vapor deposition (HPCVD) [6,7,14] have been particularly successful in making high-quality epitaxial films. In contrast, the growth of non-epitaxial MgB 2 films on amorphous or polycrystalline substrates has attracted relatively limited attention and yielded less promising results [9,[17][18][19][20][21][22]. Indeed, non-epitaxial films typically exhibit large surface roughness and reduced T c [9,[17][18][19][20][21][22].…”

“…In contrast, the growth of non-epitaxial MgB 2 films on amorphous or polycrystalline substrates has attracted relatively limited attention and yielded less promising results [9,[17][18][19][20][21][22]. Indeed, non-epitaxial films typically exhibit large surface roughness and reduced T c [9,[17][18][19][20][21][22]. For example, films prepared on glassy carbon substrates by co-deposition of Mg and B followed by annealing at 700 °C had large roughness, depressed T c values of 25-30 K, and compositional non-uniformity manifested as the Mg/B ratio varying as a function of depth [19,20].…”

“…Indeed, non-epitaxial films typically exhibit large surface roughness and reduced T c [9,[17][18][19][20][21][22]. For example, films prepared on glassy carbon substrates by co-deposition of Mg and B followed by annealing at 700 °C had large roughness, depressed T c values of 25-30 K, and compositional non-uniformity manifested as the Mg/B ratio varying as a function of depth [19,20].…”