Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

Gallardo-Vega, Carlos; Cruz, W. de la

doi:10.1016/j.apsusc.2005.10.007

Cited by 70 publications

(34 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Since the pioneer work by Terada et al 1 different methods have been applied to grow films with reasonable quality: molecular beam epitaxy, 2 atomic layer deposition, 3 pulsed laser deposition, 4,5 dc-triode sputtering, 6,7 and mostly rfmagnetron sputtering. [8][9][10][11][12][13][14] Copper nitride decomposes at relatively low temperature into metallic copper and nitrogen.…”

Section: Introductionmentioning

confidence: 99%

“…Finally, Cu 3 N has been also suggested to be used as a barrier material in tunnel junctions, 16 as a substrate for the growth of single-crystals of porphyrins and of atomic nanowires 17 and as a good candidate for hybrid inorganic-organic solar cells. 2 From a fundamental point of view the family of Cu-N compounds offers a rich variety of electronic properties depending on chemical composition, ranging from fully metallic ͑Cu 4 N͒ ͑Ref. 18͒ to semiconducting ͑Cu 3 N͒ behavior.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…3. 결과 및 고찰 와 일치하는 전자결합에너지 피크 932.4 eV에서 나 타났다 [24][25][26] . Cu의 함량이 6 at.%(그림 5b), 10 at.% (그림 5c), 14 at.%(그림 5d)인 박막에서 동일하게 화학양론적 Cu 3 N의 결합에너지와 일치하는 전자결 합에너지 피크가 나타났다.…”

Section: 서 론unclassified

Effect of Copper Content on the Microstructural Properties of Mo-Cu-N Films

Shin¹,

Choi²,

Wang³

et al. 2010

Journal of the Korean institute of surface engineering

View full text Add to dashboard Cite

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in Ar/N 2 gaseous atmosphere. As increasing N 2 pressure, the microstructure of Mo-N films changed from γ-Mo 2 N of (111) having face-centered-cubic (FCC) structure to δ-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the Mo . 그 중에서도 Si를 첨가하므로 40 GPa 이상 의 초고경도를 나타내는 nc-TiN/a-Si3N4와 같은 결 정질과 비정질로 이루어진 나노복합체 미세구조에 대한 연구가 활발히 진행되었다 [17][18][19] . 그러나, Cu, Ag와 같은 soft metal(SM)을 첨가한 다성분계 Me-SM-N에 대한 연구는 이제 시작단계라고 할 수 있 다 11-16). 그 중에서, Mo-Cu-N 박막의 경우 MoO 3 -CuO의 이성분계 산화물에 의해 매우 낮은 마찰계

show abstract

“…Various methods have been employed to obtain copper nitride films, such as RF-sputtering [5][6][7][8][9], RF-plasma chemical reactor [10], reactive pulsed laser deposition [11], and activated reactive evaporation [12]. Despite the promising properties of Cu 3 N, large discrepancies reported in the literature about its measured physical properties have hampered the implementation of reliable technological devices.…”

Section: Introductionmentioning

confidence: 99%

Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering

et al. 2017

View full text Add to dashboard Cite

Abstract:We report the self-buckling (or peeling off) of cubic Cu 3 N films deposited by DC magnetron sputtering of a Cu target in a nitrogen environment at a gas pressure of 1 Pa. The deposited layer partially peels off as it is exposed to ambient air at atmospheric pressure, but still adheres to the substrate. The chemical composition of the thin film as investigated by means of X-ray photoelectron spectroscopy (XPS) shows a considerable surface oxidation after exposure to ambient air. Grazing incidence X-ray diffraction (GIXRD) confirms the formation of a crystalline Cu 3 N phase of the quenched film. Notable are the peak shifts in the deposited film to smaller angles in comparison to stress-free reference material. The X-ray pattern of Cu 3 N exhibits clear differences in the integral width of the line profiles. Changes in the film microstructure are revealed by X-ray diffraction, making use of X-ray line broadening (Williamson-Hall and Stokes-Fourier/Warren-Averbach method); it indicates that the crystallites are anisotropic in shape and show remarkable stress and micro-strain.

show abstract

Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

Cited by 70 publications

References 17 publications

Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Effect of Copper Content on the Microstructural Properties of Mo-Cu-N Films

Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering

Contact Info

Product

Resources

About