2017
DOI: 10.3390/coatings7050064
|View full text |Cite
|
Sign up to set email alerts
|

Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering

Abstract: Abstract:We report the self-buckling (or peeling off) of cubic Cu 3 N films deposited by DC magnetron sputtering of a Cu target in a nitrogen environment at a gas pressure of 1 Pa. The deposited layer partially peels off as it is exposed to ambient air at atmospheric pressure, but still adheres to the substrate. The chemical composition of the thin film as investigated by means of X-ray photoelectron spectroscopy (XPS) shows a considerable surface oxidation after exposure to ambient air. Grazing incidence X-ra… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

6
25
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
10

Relationship

1
9

Authors

Journals

citations
Cited by 34 publications
(31 citation statements)
references
References 35 publications
(38 reference statements)
6
25
0
Order By: Relevance
“…This observation though not totally unexpected is difficult to comprehend in the present synthesis strategy which is a low-temperature process. Cu 3 N, a metastable semiconducting material with excellent dielectric properties, is conventionally synthesized by radio frequency sputtering, reactive pulsed laser deposition, sputtering, etc. Some recent reports involve the use of a single source precursor with a 3:1 stoichiometric ratio of Cu/N, resulting in the reasonably low-temperature decomposition to obtain Cu 3 N. Synthesis of nitrides and oxynitrides by the nitridation of oxides is also a reported process. The Cu 3 N observed by the protocol reported falls in this category.…”
Section: Resultsmentioning
confidence: 99%
“…This observation though not totally unexpected is difficult to comprehend in the present synthesis strategy which is a low-temperature process. Cu 3 N, a metastable semiconducting material with excellent dielectric properties, is conventionally synthesized by radio frequency sputtering, reactive pulsed laser deposition, sputtering, etc. Some recent reports involve the use of a single source precursor with a 3:1 stoichiometric ratio of Cu/N, resulting in the reasonably low-temperature decomposition to obtain Cu 3 N. Synthesis of nitrides and oxynitrides by the nitridation of oxides is also a reported process. The Cu 3 N observed by the protocol reported falls in this category.…”
Section: Resultsmentioning
confidence: 99%
“…XPS is sensitive to surface contamination [26]. Before conducting the XPS analysis, the surfaces of the CuCr 1−x Zn x O 2 were bombarded with argon ions to remove absorbed oxygen elements and contaminants, in order to acquire the correct compositions.…”
Section: Resultsmentioning
confidence: 99%
“…2) with positive slope at lower temperatures. Qualitatively, this behavior indicates that the crystallites are anisotropic in shape and present domains with imperfections within the crystalline lattice (stacking faults, vacancies, dislocations, and others), respectively 18,19 . The analyses of WH-plot results are in good agreement with the TEM images, and point toward a smooth increase of the crystallite size of resulting nanostructures in the early range of annealing temperature (around 450 ºC), reaching values close to 20 nm at 700 ºC.…”
Section: Resultsmentioning
confidence: 99%