2018
DOI: 10.1016/j.solidstatesciences.2018.05.010
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Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

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Cited by 25 publications
(10 citation statements)
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“…This phenomenon is attributable to the partial lattice distortion caused by the ionic size difference between Al 3 + and Zn 2 + . The same trend was observed and reported by Hong et al [48]…”
Section: Xrd Analysissupporting
confidence: 91%
“…This phenomenon is attributable to the partial lattice distortion caused by the ionic size difference between Al 3 + and Zn 2 + . The same trend was observed and reported by Hong et al [48]…”
Section: Xrd Analysissupporting
confidence: 91%
“…These results show that the 500-fold enhancement of the conductivity after Ag deposition originates from the two orders of magnitude enhancement of the carrier concentration as well as from a significant improvement of mobility. It has been reported that several factors contribute to the PF performance of ZnO film, such as the doping efficiency on Zn sites [8], crystallinity [25,26], stress and strain [27], the grain-boundary [28,29] and areal concentration of dislocation [10]. The enhancement of the PF performance in the present Ag-deposited ZnO films can be mainly ascribed to the Ag NPs on the ZnO films which lead to a remarkable increase of the carrier concentration and thus to a great improvement of conductivity.…”
Section: Resultsmentioning
confidence: 99%
“…The Seebeck coefficient is defined as the ratio of the voltage difference to the temperature difference between two sides of the materials ( S = Δ V /Δ T ). The temperature range could be set by using a software system [19]. In this paper, the temperature difference was from 323 to 478 K at intervals of 50 K under a helium gas flow atmosphere.…”
Section: Methodsmentioning
confidence: 99%