Study of the bulk lifetime and material saturation current density of different p-type monocrystalline silicon materials

Wolny, Franziska; Müller, M.; Krause, A.; Neuhaus, Holger

doi:10.1016/j.egypro.2017.09.264

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…Even so, there is no arguing that there is an ongoing head‐to‐head battle between these 2 highly developed large‐scale technologies, and no clear winner has yet to emerge. Cz‐Si carries the edge in quality and has been boosted recently by the advent of passivated emitter rear contact (PERC) cells in industry and the adoption of diamond wire saws for wafer cutting . Yet p‐type mc‐Si still enjoys a significant cost advantage because of its high throughput and better scalability, which derives from lower capital costs and labor expense .…”

Section: Introductionmentioning

confidence: 99%

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

Stoddard

Russell

Hixson

et al. 2018

Progress in Photovoltaics

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SolarWorld has developed a new entrant in the field of crystal growth for silicon photovoltaic substrates. The NeoGrowth technique is a contactless bulk crystal growth method for producing single crystal ingots. NeoGrowth material can be produced at a throughput on par with G5 multicrystalline silicon, but with p-type as-grown minority carrier lifetimes exceeding 600 microseconds for a 1.5-ohm cm resistivity. The silicon has low oxygen, and light-induced degradation is measured at 0.5% to 0.7% in passivated emitter rear contact-based modules. In the first report of results from this technique, p-type resistivity can be managed within a range of 1.5 to 2.0 ohm cm over the entire ingot. Dislocation density is shown to be typically in the 10 4 to 10 5 /cm 2 range but can be managed down to even lower levels. After cell processing steps, minority carrier lifetime can exceed 1.5 milliseconds for p-type material and cell efficiencies on industrial cells range up to 20.9%.

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Section: Introductionmentioning

confidence: 99%

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

Stoddard

Russell

Hixson

et al. 2018

Progress in Photovoltaics

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Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Gillespie,

Gautier,

van der Burgt

et al. 2024

Advanced Energy Materials

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Perovskite solar cells have reached an impressive certified efficiency of 26.1%, with a considerable fraction of the remaining losses attributed to carrier recombination at perovskite interfaces. This work demonstrates how time‐resolved photoluminescence spectroscopy (TRPL) can be utilized to locate and quantify remaining recombination losses in perovskite solar cells, analogous to methods established to improve silicon solar cell passivation and contact layers. It is shown how TRPL analysis can be extended to determine the bulk and surface lifetimes, surface recombination velocity, the recombination parameter, J0, and the implied open‐circuit voltage (iVoc) of any perovskite device configuration. This framework is used to compare 18 carrier‐selective and passivating contacts commonly used or emerging for perovskite photovoltaics. Furthermore, the iVoc values calculated from the TRPL‐based framework are directly compared to those calculated from photoluminescence quantum yields and the measured solar cell Voc. This simple technique serves as a practical guide for screening and selecting multifunctional, passivating perovskite contact layers. As with silicon solar cells, most of the material and interface analysis can be done without fabricating full devices or measuring efficiency. These purely optical measurements are even preferable when studying bulk and interfacial passivation approaches, since they remove complicating effects from poor carrier extraction.

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Interfacial Behavior and Stability Analysis of p‐Type Crystalline Silicon Solar Cells Based on Hole‐Selective MoO_X/Metal Contacts

Cao

Lin

et al. 2019

Solar RRL

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Molybdenum trioxide (MoOX, X < 3), with a large work function, can induce upward band bending in crystalline silicon (c‐Si) when constructing a heterojunction, which makes it an attractive candidate for hole‐selective contact in c‐Si solar cells. Herein, the passivation property and hole selectivity of MoOX thin films are investigated on p‐type c‐Si wafers using MoOX/aluminum (Al) as rear contacts. To elevate the performance from the aspect of light management, silver (Ag) and copper (Cu) are further used as back electrodes instead of Al. Solar cells with Ag electrodes deliver the best performance with a power conversion efficiency of 18.74%, followed by Cu (17.61%) and Al (16.36%) electrodes, attributing to the better reflectivity of Ag and Cu. It is also noted that solar cells with MoOX/Ag and MoOX/Cu contacts show significant degradation under room temperature storage. The interfacial evolutions are then carefully studied as a function of elevated temperature that accelerate the thermodynamic process. The degradation mechanism involves redox reaction and metal diffusion at the MoOX/metal interfaces. This work points out the importance of selecting the adjacent layers of MoOX and regulating the interfaces to stabilize the MoOX‐based c‐Si solar cells.

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Study of the bulk lifetime and material saturation current density of different p-type monocrystalline silicon materials

Cited by 6 publications

References 13 publications

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Interfacial Behavior and Stability Analysis of p‐Type Crystalline Silicon Solar Cells Based on Hole‐Selective MoO_X/Metal Contacts

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Study of the bulk lifetime and material saturation current density of different p-type monocrystalline silicon materials

Cited by 6 publications

References 13 publications

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

NeoGrowth silicon: A new high purity, low‐oxygen crystal growth technique for photovoltaic substrates

Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Interfacial Behavior and Stability Analysis of p‐Type Crystalline Silicon Solar Cells Based on Hole‐Selective MoOX/Metal Contacts

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Product

Resources

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Interfacial Behavior and Stability Analysis of p‐Type Crystalline Silicon Solar Cells Based on Hole‐Selective MoO_X/Metal Contacts