Study of Si self-diffusion by nuclear techniques

Demond, F.J.; Kalbitzer, S.; Mannsperger, H.; Damjantschitsch, H.

doi:10.1016/0375-9601(83)90641-2

Cited by 62 publications

(14 citation statements)

References 10 publications

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“…The points fall nearly 2 orders of magnitude below our clean surface results, and lie squarely in the midrange of previously published data. This agreement suggests that there was significant surface adsorption in past studies [13,14,[18][19][20][21][22]. The value at 0.01 ML (3:5 10 ÿ15 cm 2 =s) was only slightly higher than at 1 and 3 ML.…”

supporting

confidence: 85%

“…Figure 1(b) shows the temperature dependence of D for the atomically clean surface. Our numbers are 2 to 4 orders of magnitude larger than those reported in previously published work [13,14,[18][19][20][21][22] done under less controlled adsorption conditions, and imply a correspondingly larger defect concentration caused by the surface. We obtain an activation energy of 3:12 0:05 eV and a preexponential factor of 0:01 cm 2 =s.…”

contrasting

confidence: 65%

“…If the key defect is a vacancy with a hopping energy of 1.8 eV, as recently reported for this temperature range [23], our data yield a formation energy of 1.3 eV. [13,14,[18][19][20][21][22] with various methods and doping levels. HJ refers to heterojunction method.…”

supporting

confidence: 53%

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Control of Defect Concentrations within a Semiconductor through Adsorption

et al. 2006

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The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects.

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confidence: 85%

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confidence: 65%

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Control of Defect Concentrations within a Semiconductor through Adsorption

et al. 2006

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“…A second technique utilizes a nuclear reaction profiling method, (p, y ) resonance broadening, to profile the natural (stable) Si isotope in samples ion-implanted with silicon (Hirvonen and Anttila, 1979;Demond, Kalbitzer, Mannsperger, and Damjantschitsch, 1983). These studies have covered the temperature range 830'C -1200'C and find activation energies about 4.0 -4.2 eV using data only at or below 1100 C. This is lower than the activation energies of diffusion from the silicon tracer studies (whose data are concentrated in the 1100 -1300 C temperature range).…”

Section: Non-coulombic Interactionsmentioning

confidence: 99%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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“…In the most of works, covering oxygen atom behavior in Si, diffusion from vapour to Si substrate was investigated. However authors of [6] investigated diffusion from SiO 2 . Titanium self-diffusion was studied in [7].…”

Section: Process Simulationmentioning

confidence: 98%

CoSi 2 /TiO 2 /SiO 2 /Si gate structure formation

Rogozhin¹,

Khorin

Наумов

et al. 2009

SPIE Proceedings

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Recently investigations of the technologies using self-organization and phase layering occur more and more frequently. Considerable simplifications of processes, self-alignment of elements and reduction of stage quantity are the reasons of that. In this work we present results of computer simulation and experimental study of CoSi 2 /TiO 2 /SiO 2 /Si gate structure formation technology which uses solid-phase diffusion and phase-layering. The bilayer of TiO 2 and SiO 2 was chosen as gate dielectric because titanium dioxide is possessed of extremely high dielectric permittivity and silicon dioxide has large band gap and high quality interface with Si. Because of its low resistivity CoSi 2 is considered now as one of the most prospective material for metal gate electrodes. The technology which was simulated in this work allows to form such a gate structure during the sole annealing process. To compute the technology parameters the program, which take into account diffusion properties of Co, Ti, Si and O was realized. Also the same structure was formed by rapid thermal oxidation and magnetron sputtering, with following rapid annealing. Simulation and experimental results show that the technology can be used for gate structure formation.

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Study of Si self-diffusion by nuclear techniques

Cited by 62 publications

References 10 publications

Control of Defect Concentrations within a Semiconductor through Adsorption

Control of Defect Concentrations within a Semiconductor through Adsorption

Point defects and dopant diffusion in silicon

CoSi 2 /TiO 2 /SiO 2 /Si gate structure formation

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