Zirconium oxide (ZrO 2 ) films have been deposited on cleaned and heated p-type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO 2 layer on ZrO 2 /Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si structures with 3 20-nm-thick dielectric layers were formed by electron-beam evaporation technique. The fixed charge densities in 3-nm-thick YSZ layers are 3x10 10 -3.7x10 10 cm 2 , leakage current density at a voltage -1V achieves ~7,9·10 -7 /cm 2 .
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