2006
DOI: 10.1016/j.jcrysgro.2005.12.052
|View full text |Cite
|
Sign up to set email alerts
|

Study of pulsed laser-deposited phosphorus-doped carbon/p-silicon photovoltaic cell

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
1
0

Year Published

2006
2006
2015
2015

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 5 publications
0
1
0
Order By: Relevance
“…Although much effort has devoted to improving the fabrication techniques of C/Si heterojunction PV cells ( Table 1 ) and adjusting the bandgap of a‐C, the application of a‐C/Si heterojunction PV cells have developed slowly due to the high density of defects, the difficulty of controlling the sp 2 /sp 3 ratio of the a‐C, the inhomogeneity of dopants, and the extreme growth process of a‐C …”
Section: Amorphous C/si Heterojunction Solar Cellsmentioning
confidence: 99%
“…Although much effort has devoted to improving the fabrication techniques of C/Si heterojunction PV cells ( Table 1 ) and adjusting the bandgap of a‐C, the application of a‐C/Si heterojunction PV cells have developed slowly due to the high density of defects, the difficulty of controlling the sp 2 /sp 3 ratio of the a‐C, the inhomogeneity of dopants, and the extreme growth process of a‐C …”
Section: Amorphous C/si Heterojunction Solar Cellsmentioning
confidence: 99%
“…5. The result shows the optical band gap of a-C:I thin film at 1.0 g is lowest compared to that of other samples which regarding the sample becomes more graphitic [11]. The increased in optical band gap with the iodine incorporation can be explained due to the formation of C-I network in the thin films which lead to increase the sp 2 bonded.…”
mentioning
confidence: 88%
“…The as-deposited (undoped) a-C has low photoconductivity and shows weakly p-type semiconducting nature [5,6], but to realize the utilization of carbon material as alternative material in optoelectronic devices, controlling the conduction type of the thin film is necessary. Taken into account is the n-C/p-Si hetero-junctions which have been recognize through n-type doping using phosphorus and nitrogen [7] and p-C/n-Si hetero-junctions from the p-type doping of using boron and iodine [8,9].Other than that, in order to increase the efficiency of the cell, a-C films can also be used as a protective anti-reflecting coating for regular silicon solar cells [10].…”
Section: Introductionmentioning
confidence: 99%