Nanostructured amorphous carbon (a-C) solar cells were successfully deposited via a self-designed aerosol-assisted chemical vapor deposition (AACVD). The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved efficiency ( ) of 1.72 × 10 −4 % for device deposited at 500 ∘ C, 1.24 × 10 −4 % for 450 ∘ C, and 0.03 × 10 −4 % for 400 ∘ C. Photoresponse characteristic was highlighted under illumination (AM 1.5 illuminations: 100 mW/cm 2 , 25 ∘ C), where conductivity increased when the sample was being hit by light. Transmittance spectrum exhibits a large transmittance value (>85%) and absorption coefficient value of 10 4 cm −1 at the visible range from 390 to 790 nm. The nanostructured a-C thin film deposited at higher temperature possesses lower transmittance due to higher absorption as a result of the higher content of sp 2 -bonded carbon atoms. From Tauc's plot, optical band gap ( ) was determined, and decreased as deposition temperature increased (1.2 eV, 1.0 eV, 0.7 eV). On the other hand, FESEM images exhibited a nanostructured sized a-C with the particle size less than 100 nm. To the best of our knowledge, the presence of nanostructured particle of a-C by a self-prepared AACVD has not frequently been reported.
Nitrogen doped amorphous carbon (n-C:N) solar cells were successfully prepared using a simple and low cost Chemical Vapor Deposition (CVD) method using camphor oil as a precursor. Four samples of n-C:N were deposited by varying the deposition temperature (500oC, 550oC, 600oC, 650oC). The fabricated solar cell using n-C:N with the configuration of Au/n-C:N/p-Si/Au achieved an increasing efficiency as temperature increase (0.000202% to 0.001089%). As a reference, pure a-C was deposited at 500oC and exhibit 0.000048% efficiency. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. Electrical conductitivity possesses increasing value (1.69 x 10-2 to 22 Ω-1 cm-1) due to increasing sp2 ratio in a-C as temperature increase. The rectifying curves signify the heterojunction between the n-doped a-C film and the p-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25oC) and optical band gap for the nitrogen doped a-C is reported from 0.75 eV to 0.25 eV as temperature increase.
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