1975
DOI: 10.1103/physrevb.12.2488
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Study of photoluminescence inCu2O

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Cited by 105 publications
(54 citation statements)
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“…The unusual peak shape is due to the convolution of the orthoexciton peak and the phononassisted exciton peak, which broadens and grows at higher temperatures where the absorption probability of phonons by excitons is large. 5,[21][22] The peak was evident even at the lowest of excitation powers (0.85 µW). Thus, excitons are generated under visible excitation even in polycrystalline Cu 2 O substrates used in photovoltaic fabrication.…”
Section: S6 Characteristics Of Polycrystalline Cu 2 O Wafersmentioning
confidence: 95%
“…The unusual peak shape is due to the convolution of the orthoexciton peak and the phononassisted exciton peak, which broadens and grows at higher temperatures where the absorption probability of phonons by excitons is large. 5,[21][22] The peak was evident even at the lowest of excitation powers (0.85 µW). Thus, excitons are generated under visible excitation even in polycrystalline Cu 2 O substrates used in photovoltaic fabrication.…”
Section: S6 Characteristics Of Polycrystalline Cu 2 O Wafersmentioning
confidence: 95%
“…Extensive experimental data including specific heat measurements [23,24], Raman and IR detection of long-wavelength optically active phonons [25,26] together with neutron derived phonon dispersion relations and phonon density of states [27,28] have been reported for Cu 2 O while the calculations of the volume thermal expansion in Ag 2 O and Cu 2 O have also been published [15,16,28]. EXAFS measurements on Ag 2 O and Cu 2 O [19][20][21][22] indicate that the mechanism at the origin of their NTE involves deformations of the M 4 O tetrahedral units (M = Ag, Cu), rather than simple rigid units vibrations.…”
Section: Introductionmentioning
confidence: 99%
“…We have to mention that in photoluminescence studies a very sharp but weak exciton peak associated with the 1s exciton is observed in Cu 2 O at 2.033 eV. The corresponding radiative electron-hole-pair recombination is due to magnetic-dipole and electric-quadrupole Γ + 7v → Γ + 6c transitions [40]. Identifying the ionization edge with E g = 2.166 eV [38], one obtains a binding energy of 133 meV for the 1s state.…”
Section: Allowed and Forbidden Optical Transitionsmentioning
confidence: 97%