Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

Hardy, An; Adelmann, Christoph; Elshocht, Sven Van; Rul, H. Van den; Bael, Marlies K. Van; Gendt, Stefan De; D’Olieslaeger, M.; Heyns, Marc; Kittl, J. A.; Mullens, J.

doi:10.1016/j.apsusc.2009.04.184

Cited by 38 publications

(22 citation statements)

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“…27,28 The bond formation with Gd, which has a much higher atomic mass than Si, would also shift the Si-O Si band toward lower wavenumbers. 29 Figure 2(a) also shows peaks at around 529 and 451 cm À1 that can be assigned to the Gd-O vibrations. This can be inferred from direct comparison with the Gd 2 O 3 powder spectrum shown in Fig.…”

Section: A Structural Characterizationmentioning

confidence: 91%

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Feijoo

Pampillón

Andrés

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inOptimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon J.Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition High j gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronics applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, polycrystalline stoichiometric Gd 2 O 3 films were obtained by HPS. The growth rate decreases when increasing the deposition pressure. For relatively thick films (40 nm), a SiO x interface as well as the formation of a silicate layer (GdSiO x ) is observed. For thinner films, in Ti gated devices the SiO x interface disappears but the silicate layer extends over the whole thickness of the gadolinium oxide film. These MIS devices present lower equivalent oxide thicknesses than Pt gated devices due to interface scavenging. The density of interfacial defects D it is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. MIS with the dielectric deposited at higher pressures also present lower flatband voltage shifts DV FB in the C HF -V G hysteresis curves.

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Section: A Structural Characterizationmentioning

confidence: 91%

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Feijoo

Pampillón

Andrés

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…FTIR spectra are represented in Fig is proportional to the SiO 2 thickness [25], so the area of this peak between ~950 cm -1 and ~1020 cm -1 can be used as a qualitative estimation of the SiO x interface layer thickness [26]. The shift towards lower wavenumber with respect to the ideal SiO 2 band is related 6 to the fact that the interface consists of Si suboxide and/or a stressed interfacial layer [23].…”

Section: Resultsmentioning

confidence: 99%

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

et al. 2015

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“…[49][50][51] A close look at the spectra in the region 1300-1750 cm (5) and (6), observed for ALD films deposited at 140 8C, can be attributed to entrapped CO 2 and carboxylate or formate groups. The commonly observed bands (7), (8), and (9) for the films prepared by both methods corresponds to bridged, organic-like or monoand bidendate structures from CO and CO 2 adsorption.…”

mentioning

confidence: 90%

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Premkumar

Toeller

Adelmann

et al. 2012

Chemical Vapor Deposition

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NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb) 2 (dmamb ¼ 1-dimethylamino-2-methyl-2-butanolate) precursor using O 3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, microstructure, and homogeneity. The Ni(dmamb) 2 half-cycle shows an initial rapid partial saturation followed by slower further adsorption. By contrast, the O 3 half-cycle shows good saturation behavior. In the studied deposition temperature range for ALD, the films are polycrystalline with negligible amounts of carbon in the films. Furthermore, the films are homogeneous in thickness and composition, demonstrating that high-quality NiO films can be deposited by ALD from Ni(dmamb) 2 .

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Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

Cited by 38 publications

References 38 publications

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

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Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

Cited by 38 publications

References 38 publications

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

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NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors