NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Abstract

NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb) 2 (dmamb ¼ 1-dimethylamino-2-methyl-2-butanolate) precursor using O 3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, microstructure, and homogeneity. The Ni(dmamb) 2 half-cycle shows an initial rapid partial saturation followed by slower further adsorption. By contrast, the O 3 half-cycle shows good saturation behavior. In the studied deposition temperature range for ALD, the films are polycrystalline with negligible amounts of carbon in the films. Furthermore, the films are homogeneous in thickness and composition, demonstrating that high-quality NiO films can be deposited by ALD from Ni(dmamb) 2 .

Atomic Layer Deposition of oriented nickel titanate (NiTiO3)

“…Since then, a range of different precursor combinations have been explored, but they either have narrow ALD windows at low temperatures or simply no ALD window at all. [132][133][134] The latter is the case for Ni(thd)2 as later work has shown. [135] The most promising process seemed to be Ni(acac)2 combined with O3, as reported by Utriainen et al in 1998.…”

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

“…However, these films, grown at 300°C, also contained a significant amount of carbon (12%). Similar to CVD, ALD using an aminoalkoxide precursor, Ni(dmamb) 2 , has been found to give nickel rich films with a Ni/O ratio of 1.3, as measured by time‐of‐flight elastic recoil detection analysis (ToF‐ERDA) 75 . According to Ko et al the high nickel content stems from the presence of metallic nickel in the films 76 .…”

Atomic layer deposition of strontium titanate films from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

“…For ternary oxides the ALD process has to include two metal precursors with possibly different temperature ranges for the desired surface reaction. In this work we report on ALD of strontium titanate (STO) from bis(tri-isopropylcyclopentadienyl)-strontium, Sr( i Pr 3 Cp) 2 [33] as oxygen source or Sr(tBu 3 Cp) 2 with Ti(OMe) 4 and H 2 O [34,35]. Sr( i Pr 3 Cp) 2 consists of one central Sr ion and two cycplopentadienyl (Cp) ligands with three propyl groups each, as schematically depicted in Fig.…”

“…A wide range of binary and ternary high-k transition metal oxides have been investigated as insulator in resistance switching RAM cells. Most prominent binary oxides are TiO 2 [1][2][3], NiO [4][5][6][7], but also Ta 2 O 5 [8], Cu 2 O [9] and even SiO 2 [10] have been examined.…”