Study of expansion of laser ablation plumes of Ga and GaN in various N2 atmospheres using stigmatic emission spectroscopy

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

“…[21][22][23] However, the effect of a-Al 2 O 3 substrates' nitridation on the properties of GaN lms during PLD growth, as well as the growth mechanism of GaN on nitrided a-Al 2 O 3 substrates by PLD, lacks thorough study. [24][25][26][27] In this work, we investigate on the effect of a-Al 2 O 3 substrates nitridation on the properties of GaN lms grown by PLD systematically and propose the growth mechanism of GaN lms on nitrided a-Al 2 O 3 substrates by PLD. An effective approach to achieve high-quality GaN lms on a-Al 2 O 3 substrates by PLD is hence presented.…”