Pulsed laser deposition of manganese doped GaN thin films

Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 × 10 16 cm −2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 • C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 • C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 • C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

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“…MOCVD, MBE, diffusion, sputtering, pulsed laser deposition, etc, are used for the fabrication of GaN based DMS materials [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Terakado

Tanaka

2007

jjap

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“…The study of atomic vapor is one of the key steps in the isotope separation process, and one of the methods for producing vapor is laser ablation. Laser ablation is a powerful tool for many different applications including thin film deposition, 3,4 ion sources 5 (for ion implantation and particle accelerators), analytical purposes, 6 and as already mentioned, isotope separation. 7–9 Plume formation is very complex and depends on the laser, material, and surrounding media parameters.…”

Section: Introductionmentioning

confidence: 99%

Measurement of Dysprosium Stark Width and the Electron Impact Width Parameter

Santos

Neto²,

Rodrigues

et al. 2018

Appl Spectrosc

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In this work, we suggest a methodology to determine the impact parameter for neutral dysprosium emission lines from the characterization of the plasma generated by laser ablation in a sealed chamber filled with argon. The procedure is a combination of known consistent spectroscopic methods for plasma temperature determination, electron density, and species concentration. With an electron density of 3.1 × 1018 cm–3 and temperature close to 104 K, we estimated the impact electron parameter for nine spectral lines of the neutral dysprosium atom. The gaps in the impact parameter data in the literature, mainly for heavy elements, stress the importance of the proposed method.

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“…This proved an obstacle to obtaining the required magnetic semiconductor film properties for device fabrication. The Pulsed laser deposition (PLD) can be used to prepare thin films from multicomponent targets and allows Mn concentrations in the GaN films to be controlled easily by varying the quantity of Mn included in the initial target preparation [60]. The growth conditions can be far from equilibrium, which offers the possibility of reaching higher Mn concentrations without phase separation [60].…”

Section: Gan Nanostructured Materials Dopingmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Pulsed laser deposition of manganese doped GaN thin films

Cited by 18 publications

References 21 publications

Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Measurement of Dysprosium Stark Width and the Electron Impact Width Parameter

Review of GaN Nanostructured Based Devices

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Pulsed laser deposition of manganese doped GaN thin films

Cited by 18 publications

References 21 publications

Photoinduced Phenomena in GeO2–GeS2 Glasses

Photoinduced Phenomena in GeO2–GeS2 Glasses

Measurement of Dysprosium Stark Width and the Electron Impact Width Parameter

Review of GaN Nanostructured Based Devices

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Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Photoinduced Phenomena in GeO₂–GeS₂ Glasses